Heterostructures based on the GeSn nanocompound have high impact on integrated
photonics devices. The promising feature of GeSn nanostructures is its direct bandgap …

Among photodetectors, avalanche photodiodes (APDs) have an important place due to their
excellent sensitivity to light. APDs transform photons into electrons and then multiply the …

In this work, a CdTe/Ge/Si photodetector was fabricated using two different methods. The
thermal evaporation method was used to prepare Ge on n-type silicon substrates, and then …

This paper presents a novel FDSOI FinFETs with SiGe channel/Si cap layer (35 nm/5 nm)
formed on SOI wafers with 20 nm Si body. Electrical characterization result shows that JL …

In the present work, single phase CoSb3 skutterudite nanomaterials were prepared via a
ball milling method, and their thermoelectric characteristics were compared with the samples …

The development of the low dislocation density of the Si-based GaAs buffer is considered
the key technical route for realizing InAs/GaAs quantum dot lasers for photonic integrated …

This work proposes a high-performance lattice-matched SiGeSn/GeSn/SiGeSn
heterojunction bipolar phototransistors (HPTs) and pin photodiodes grown on strain-free …

High-responsivity and low dark current resonant-cavity-enhanced (RCE) Ge PIN
photodiodes with a monolayer graphene absorber were demonstrated on a 200 mm …

This work reports a novel mid-infrared lateral Ge 1− x Sn x (x= 6%) waveguide (WG)-based
phototransistors (PTs) on a silicon platform. A lateral device structure is proposed to …

In this work, the polycrystalline GeSn film with Sn content of 25.3% on InP is obtained by
sputtering at room temperature and then rapid thermal annealing (RTA) at 300℃. The single …