Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: A critical review
This article critically reviews the architectural novelties, emerging materials (substrate,
buffer, barrier & contact materials), technological advancements, processing techniques …
buffer, barrier & contact materials), technological advancements, processing techniques …
GaN-based power devices: Physics, reliability, and perspectives
Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …
fabrication of power devices. Among the semiconductors for which power devices are …
Stability and reliability of lateral GaN power field-effect transistors
JA Del Alamo, ES Lee - IEEE Transactions on Electron Devices, 2019 - ieeexplore.ieee.org
GaN electronics constitutes a revolutionary technology with power handling capabilities that
amply exceed those of Si and other semiconductors in many applications. RF, microwave …
amply exceed those of Si and other semiconductors in many applications. RF, microwave …
GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices
N Wu, Z ** effects in AlGaN/GaN HEMTs
R Ye, X Cai, C Du, H Liu, Y Zhang, X Duan… - IEEE Access, 2021 - ieeexplore.ieee.org
Due to the excellent material characteristics, AlGaN/GaN HEMTs are widely used in high
power and high frequency applications. However, the existence of damages, defects and …
power and high frequency applications. However, the existence of damages, defects and …
Deep-level traps in AlGaN/GaN-and AlInN/GaN-based HEMTs with different buffer do** technologies
Deep-level traps in AlGaN/GaNand AlInN/GaN-based HEMTs with different buffer do**
technologies are identified by drain current transient spectroscopy (DCTS) and low …
technologies are identified by drain current transient spectroscopy (DCTS) and low …
Trap** effects on AlGaN/GaN HEMT characteristics
PV Raja, JC Nallatamby, N DasGupta… - Solid-State Electronics, 2021 - Elsevier
This paper describes device simulation studies of surface and buffer trap** effects on
static IV, output-admittance (Y 22), and transient characteristics of AlGaN/GaN HEMTs. The …
static IV, output-admittance (Y 22), and transient characteristics of AlGaN/GaN HEMTs. The …
Electron trap** in extended defects in microwave AlGaN/GaN HEMTs with carbon-doped buffers
This paper investigates AlGaN/GaN high-electron mobility transistors (HEMTs) fabricated on
epistructures with carbon (C)-doped buffers. Metalorganic chemical vapor deposition is used …
epistructures with carbon (C)-doped buffers. Metalorganic chemical vapor deposition is used …
Investigation on effect of AlN barrier thickness and lateral scalability of Fe-doped recessed T-gate AlN/GaN/SiC HEMT with polarization-graded back barrier for future …
In this study, the influence of AlN barrier thickness (tb) on the RF & DC performances of 50
nm recessed T-gate Fe-doped AlN/GaN/SiC HEMT is investigated. The proposed HEMT …
nm recessed T-gate Fe-doped AlN/GaN/SiC HEMT is investigated. The proposed HEMT …
Electric field map** of wide-bandgap semiconductor devices at a submicrometre resolution
Electric fields drive the degradation of wide-bandgap semiconductor devices. However,
directly map** the electric field inside an active device region remains challenging. Here …
directly map** the electric field inside an active device region remains challenging. Here …