[HTML][HTML] Atomic-scale characterization of droplet epitaxy quantum dots
The fundamental understanding of quantum dot (QD) growth mechanism is essential to
improve QD based optoelectronic devices. The size, shape, composition, and density of the …
improve QD based optoelectronic devices. The size, shape, composition, and density of the …
Compositional map** of semiconductor quantum dots and rings
In this article we review the extensive experimental work on the compositional map** of
semiconductor quantum dots and rings. After a brief introduction of the various experimental …
semiconductor quantum dots and rings. After a brief introduction of the various experimental …
Three-dimensional composition profiles of single quantum dots determined by scanning-probe-microscopy-based nanotomography
Scanning probe microscopy combined with selective wet chemical etching is employed to
quantitatively determine the full three-dimensional (3D) composition profiles of single …
quantitatively determine the full three-dimensional (3D) composition profiles of single …
Structural and compositional analysis of (InGa)(AsSb)/GaAs/GaP Stranski–Krastanov quantum dots
We investigated metal-organic vapor phase epitaxy grown (InGa)(AsSb)/GaAs/GaP Stranski–
Krastanov quantum dots (QDs) with potential applications in QD-Flash memories by cross …
Krastanov quantum dots (QDs) with potential applications in QD-Flash memories by cross …
Control of morphology and substrate etching in InAs/InP droplet epitaxy quantum dots for single and entangled photon emitters
We present a detailed atomic-resolution study of morphology and substrate etching
mechanism in InAs/InP droplet epitaxy quantum dots (QDs) grown by metal–organic vapor …
mechanism in InAs/InP droplet epitaxy quantum dots (QDs) grown by metal–organic vapor …
Suppression of InAs∕ GaAs quantum dot decomposition by the incorporation of a GaAsSb cap** layer
The influence of a GaAsSb cap** layer on the structural properties of self-assembled
InAs∕ GaAs quantum dots (QDs) is studied on the atomic scale by cross-sectional scanning …
InAs∕ GaAs quantum dots (QDs) is studied on the atomic scale by cross-sectional scanning …
Excitonic structure and pum** power dependent emission blue-shift of type-II quantum dots
In this work we study theoretically and experimentally the multi-particle structure of the so-
called type-II quantum dots with spatially separated electrons and holes. Our calculations …
called type-II quantum dots with spatially separated electrons and holes. Our calculations …
Electronic and optical properties of quantum dots on InP(100) and substrates: Theory and experiment
We study the electronic and optical properties of In As∕ In P quantum dots (QDs) on (100)
and (311) B substrates. Atomic force microscopy (AFM) and cross-sectional scanning …
and (311) B substrates. Atomic force microscopy (AFM) and cross-sectional scanning …
Exciton recombination dynamics in an ensemble of (In, Al) As/AlAs quantum dots with indirect band-gap and type-I band alignment
The dynamics of exciton recombination in an ensemble of indirect band-gap (In, Al) As/AlAs
quantum dots with type-I band alignment is studied. The lifetime of confined excitons that are …
quantum dots with type-I band alignment is studied. The lifetime of confined excitons that are …
Atomic and energy structure of InAs/AlAs quantum dots
TS Shamirzaev, AV Nenashev, AK Gutakovskii… - Physical Review B …, 2008 - APS
The atomic structure and energy spectrum of InAs quantum dots (QDs) in an AlAs matrix
have been experimentally studied by transmission electron microscopy (TEM) and steady …
have been experimentally studied by transmission electron microscopy (TEM) and steady …