We present the science and technology roadmap for graphene, related two-dimensional
crystals, and hybrid systems, targeting an evolution in technology, that might lead to impacts …

The development of spintronics devices relies on efficient generation of spin-polarized
currents and their electric-field-controlled manipulation. While observation of exceptionally …

The quantum Hall effect (QHE), and devices reliant on it, will continue to serve as the
foundation of the ohm while also expanding its territory into other SI derived units. The …

The extreme versatility of van der Waals materials originates from their ability to exhibit new
electronic properties when assembled in close proximity to dissimilar crystals. For example …

Graphene growth by thermal decomposition of silicon carbide (SiC) is a technique that
produces wafer-scale, single-orientation graphene on an insulating substrate. It is often …

Growth of epitaxial graphene (EG) with desired properties and formation of new 2D
interfaces can be achieved by intercalation of new elements into the carbon buffer layer …

Intercalation experiments on epitaxial graphene are attracting a lot of attention at present as
a tool to further boost the electronic properties of 2D graphene. In this work, we studied the …

We report on a “giant” quantum Hall effect plateau in a graphene-based field-effect transistor
where graphene is capped by a layer of the van der Waals crystal InSe. The giant quantum …

Graphene-based quantised Hall resistance standards promise high precision for the unit
ohm under less exclusive measurement conditions, enabling the use of compact …

We demonstrate reversible carrier density control across the Dirac point (Δn∼ 10 13 cm− 2)
in epitaxial graphene on SiC (SiC/G) via high electrostatic potential gating with ions …