Abstract van der Waals epitaxy (VDWE) is an ideal method for growing 2D materials and
topological insulators (TIs) onto a variety of substrates for heterostructure and integrated …

Topological Insulators are new classes of materials with insulating bulk but having gapless
surface states. Integer Quantum Hall Effect, discovered in 1980 was the first property with …

Inner design and effective regulation of interlayer are the key factors for optimizing the
capacity deliver. Herein, this work carries out precise regulation on crystalline type and …

Thin films of V–VI compound semiconductors (Bi2Se3, Bi2Te3 and Sb2Te3) have been
synthesized recently as three‐dimensional topological insulators (TIs). Although these …

In this article, we will review recent progress in the growth of topological insulator (TI) thin
films by molecular beam epitaxy (MBE). The materials we focus on are the V2-VI3 family of …

Topological insulators doped with transition metals have recently been found to host a
strong ferromagnetic state with perpendicular to plane anisotropy as well as support a …

We report on the scaling behavior of V-doped (Bi, Sb) 2 Te 3 samples in the quantum
anomalous Hall regime for samples of various thickness. While previous quantum …

Large-area topological insulator Bi 2 Te 3 thin films were grown on Al 2 O 3 (0001) using a
two-temperature step molecular beam epitaxy growth process. By depositing a low …

Epitaxial layers of the topological insulator Bi 2 Se 3 have been grown by molecular beam
epitaxy on laterally lattice-matched InP (111) B substrates. High resolution X-ray diffraction …

Sb2Te3 films are used for studying the epitaxial registry between two-dimensionally bonded
(2D) materials and three-dimensional bonded (3D) substrates. In contrast to the growth of …