Resistive-switching-based memory devices meet most of the requirements for use in next-
generation information and communication technology applications, including standalone …

An energy-efficient memristive synapse is highly desired for the development of brain-like
neurosynaptic chips. In this work, a ZnO-based memristive synapse with ultralow-power …

Owing to the advantages of simple structure, low power consumption and high-density
integration, memristors or memristive devices are attracting increasing attention in the fields …

Tungsten oxide (WO 3) thin films were deposited onto flexible substrates using radio
frequency magnetron sputtering for high electrochromic performance purposes. The effects …

Resistive switching (RS) memories are novel devices that have attracted significant attention
recently in view of their potential integration in deep neural networks for intense big data …

Novel applications for memory devices demand nanoscale flexible structures. In particular,
resistive switching (RS) devices are promising candidates for wearable and implantable …

Two-terminal memristor devices were developed by growing ZnO/ZnO-Al thin films on ITO
substrates using a magnetron sputtering system. The films demonstrate resistance …

Recently, extensive researches have been done on memristor to replace current memory
storage technologies. Study on active layer of memristor mostly involving n-type …

Flexible transparent (FT) electronic devices have gained significant attention for applications
in flexible displays, sensors, and wearable devices recently. According to the report from the …

The effect of annealing temperature on structural and optical properties of Zinc oxide (ZnO)
thin films was investigated and evaluated on the ITO glass substrates using chemical spray …