ABSTRACT Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor that has
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …

Gallium oxide (Ga 2 O 3) is emerging as a viable candidate for certain classes of power
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …

Solar-blind photodetectors are of great interest to a wide range of industrial, civil,
environmental, and biological applications. As one of the emerging ultrawide-bandgap …

Gallium oxide, as an emerging semiconductor, has attracted a lot of attention among
researchers due to its high band gap (4.8 eV) and a high critical field with the value of 8 …

Abstract Gallium oxide (Ga 2 O 3) is an emerging ultrawide bandgap (UWBG)
semiconducting material as a key building block for the applications of power electronics …

A brief review on beta gallium oxide (β‐Ga2O3) nanowires (NWs) and nanostructures (NS)
is presented in this article. β‐Ga2O3 is a wide‐bandgap (Eg∼ 4.9 eV) semiconductor and …

Leading to advancement in technological manifestations the phenomenon of persistent
luminescence and growth of luminescent materials has witnessed a rapid headway in …

Abstract Trivalent lanthanide (Ln 3+) ions doped semiconductor nanomaterials have
recently attracted considerable attention owing to their distinct optical properties and their …

β-Ga2O3 nanostructures, including nanowires (NWs), nanosheets (NSHs), and nanorods
(NRs), were synthesized using thermally dewetted Au nanoparticles as catalyst in a …

Near-infrared (NIR) persistent luminescent β-Ga2O3: Cr3+ nanowire assemblies were
synthesized by a hydrothermal process followed by calcination. The phosphor exhibits more …