Toward high efficiency at high temperatures: Recent progress and prospects on InGaN-based solar cells
III-nitride InGaN material is an ideal candidate for the fabrication of high performance
photovoltaic (PV) solar cells, especially for high-temperature applications. Over the past …
photovoltaic (PV) solar cells, especially for high-temperature applications. Over the past …
Recent Advances in Mechanically Transferable III‐Nitride Based on 2D Buffer Strategy
W Song, Q Chen, K Yang, M Liang, X Yi… - Advanced Functional …, 2023 - Wiley Online Library
Group III‐nitrides have attracted significant attention in recent years for their wide tunable
band‐gaps and excellent optoelectronic capabilities, which are advantageous for several …
band‐gaps and excellent optoelectronic capabilities, which are advantageous for several …
InGaN micro‐LED array enabled advanced underwater wireless optical communication and underwater charging
R Lin, X Liu, G Zhou, Z Qian, X Cui… - Advanced optical …, 2021 - Wiley Online Library
In this paper, the underwater applications of micro‐LED (light‐emitting diode) in light
emission, optical detection, and solar cell are demonstrated. Based on a high‐bandwidth …
emission, optical detection, and solar cell are demonstrated. Based on a high‐bandwidth …
Emerging inorganic solar cell efficiency tables (Version 1)
This paper presents the efficiency tables of materials considered as emerging inorganic
absorbers for photovoltaic solar cell technologies. The materials collected in these tables …
absorbers for photovoltaic solar cell technologies. The materials collected in these tables …
Recent advances and challenges in indium gallium nitride (inxga1-xn) materials for solid state lighting
R Kour, S Arya, S Verma, A Singh… - ECS Journal of Solid …, 2019 - iopscience.iop.org
In recent times, the demand for electrical energy is increased to such an extent that the
scientific research has to be focused on the development of materials that fulfil the growing …
scientific research has to be focused on the development of materials that fulfil the growing …
III-nitride core–shell nanowire arrayed solar cells
A solar cell based on a hybrid nanowire–film architecture consisting of a vertically aligned
array of InGaN/GaN multi-quantum well core–shell nanowires which are electrically …
array of InGaN/GaN multi-quantum well core–shell nanowires which are electrically …
Quantum well solar cells: principles, recent progress, and potential
Quantum well solar cells, as a promising approach for next-generation photovoltaic
technology, have received great attention in the last few years. Recent developments in …
technology, have received great attention in the last few years. Recent developments in …
Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells
The properties of quantum well carrier escape were studied by varying barrier thicknesses in
InGaN/GaN multi-quantum well solar cell devices. The dependence of the photocurrent on …
InGaN/GaN multi-quantum well solar cell devices. The dependence of the photocurrent on …
Effect of the quantum well thickness on the performance of InGaN photovoltaic cells
We report on the influence of the quantum well thickness on the effective band gap and
conversion efficiency of In 0.12 Ga 0.88 N/GaN multiple quantum well solar cells. The band …
conversion efficiency of In 0.12 Ga 0.88 N/GaN multiple quantum well solar cells. The band …
High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates
We demonstrate high performance InGaN/GaN multiple quantum well solar cells with thin
quantum barriers and spectral response extending to 460 nm. Devices grown on bulk (0001) …
quantum barriers and spectral response extending to 460 nm. Devices grown on bulk (0001) …