The rapid advancement of main group III–V nanomaterials endows photodetectors (PDs)
with enhanced performance. At present, various III–V nanomaterials are systematically …

A self‐powered, high‐performance Ti3C2Tx MXene/GaN van der Waals heterojunction
(vdWH)‐based ultraviolet (UV) photodiode is reported. Such integration creates a Schottky …

Interfacial engineering and heterostructures designing are two efficient routes to improve
photoelectric characteristics of a photodetector. Herein, a Ti3C2 MXene/Si heterojunction …

The fabrication of unique taper-ended GaN-Nanotowers structure based highly efficient
ultraviolet photodetector is demonstrated. Hexagonally stacked, single crystalline GaN …

Wireless communication under harsh environment using ultraviolet radiation remains a vital
field of research. We have reported the novel GaN pyramids of Djoser ultraviolet …

Vertically aligned GaN nanotowers (NTs) were grown on the Si (111) substrate by plasma-
assisted molecular beam epitaxy to design a highly responsive ultraviolet (UV) …

Hetero-structuring of dissimilar materials provides an exciting pathway to achieve unique
electrical and optical properties based on application demand. A combination of Sb 2 Se 3 …

Abstract Sb2Se3/VO2 heterojunction is successfully fabricated on a sapphire substrate
using pulsed laser deposition (PLD) and magnetron sputtering. The device shows prominent …

The heterojunction UV photodetector based on p-CuZnS and n-GaN is prepared by a simple
chemical bath deposition. The CuZnS/GaN film device shows a significantly enhanced …

The micro-and nanostructures of III-nitride semiconductors captivate strong interest owing to
their distinctive properties and myriad potential applications. Nevertheless, challenges …