The rapid advancement of main group III–V nanomaterials endows photodetectors (PDs)
with enhanced performance. At present, various III–V nanomaterials are systematically …

A self‐powered, high‐performance Ti3C2Tx MXene/GaN van der Waals heterojunction
(vdWH)‐based ultraviolet (UV) photodiode is reported. Such integration creates a Schottky …

Hetero-structuring of dissimilar materials provides an exciting pathway to achieve unique
electrical and optical properties based on application demand. A combination of Sb 2 Se 3 …

Interfacial engineering and heterostructures designing are two efficient routes to improve
photoelectric characteristics of a photodetector. Herein, a Ti3C2 MXene/Si heterojunction …

Wireless communication under harsh environment using ultraviolet radiation remains a vital
field of research. We have reported the novel GaN pyramids of Djoser ultraviolet …

Ga2O3 is a wide-bandgap semiconductor that has shown great potential for application in
solar-blind ultraviolet (UV) photodetectors. However, the responsivity and detectivity of …

The fabrication of unique taper-ended GaN-Nanotowers structure based highly efficient
ultraviolet photodetector is demonstrated. Hexagonally stacked, single crystalline GaN …

Unlike conventional photon lasing in the presence of population inversion, coherent light
sources based on the exciton-polariton (EP) mode regime of light emission have attracted …

Due to the suitable bandgap structure, efficient conversion rates of photon to electron,
adjustable optical bandgap, high electron mobility/aspect ratio, low defects, and outstanding …

Self‐powered UV photodetectors are highly desirable for applications in space
communications and environmental monitoring. However, most self‐powered UV …