In recent years, an increasing trend towards GaN integration can be observed, enabled by
the lateral structure of the GaN technology. A key improvement over a discrete …

This work presents the design and characterization of modular and compact GaN power ICs
with power HEMT, gate driver, temperature sensor, current sense-FET and amplifier. These …

In this article, a fully monolithically integrated GaN power stage with a half-bridge, driver,
level shifter, dead time and voltage mode control for 48 V DC–DC converters is proposed …

This work shows the co-integration of the lateral GaN technology with a vertical power
device, the current aperture vertical electron transistor (CAVET). The experimental proof-of …

A three-phase GaN-based motor inverter IC with three integrated phase current mirror
sensors (sense-FETs or sense-HEMTs, 1200: 1 ratio), a temperature sensor, and an …

In this work, a novel monolithically integrated and galvanically isolated GaN gate driver is
presented, which combines the separated power and data link of conventional Si-based …

This work presents the design, characterization, and optimization of a monolithically
integrated two-stage GaN gate driver. The individually combinable stages provide a high …