Room-temperature triggered single photon emission from a III-nitride site-controlled nanowire quantum dot
We demonstrate triggered single photon emission at room temperature from a site-controlled
III-nitride quantum dot embedded in a nanowire. Moreover, we reveal a remarkable …
III-nitride quantum dot embedded in a nanowire. Moreover, we reveal a remarkable …
Recent advances in room temperature single-photon emitters
Considering the ever-increasing growth of quantum technology and the expansion of its
applications into non-laboratory environments, usability at room temperature is becoming …
applications into non-laboratory environments, usability at room temperature is becoming …
Toward bright and pure single photon emitters at 300 K based on GaN quantum dots on silicon
Quantum dots (QDs) based on III-nitride semiconductors are promising for single photon
emission at noncryogenic temperatures due to their large exciton binding energies. Here …
emission at noncryogenic temperatures due to their large exciton binding energies. Here …
High-frequency acoustic charge transport in GaAs nanowires
The oscillating piezoelectric fields accompanying surface acoustic waves are able to
transport charge carriers in semiconductor heterostructures. Here, we demonstrate high …
transport charge carriers in semiconductor heterostructures. Here, we demonstrate high …
III-nitride quantum dots as single photon emitters
III-nitride quantum dots are proving to be promising for application to single photon emitting
devices. Research around the globe is revealing several interesting properties of these …
devices. Research around the globe is revealing several interesting properties of these …
Spectral diffusion and its influence on the emission linewidths of site-controlled GaN nanowire quantum dots
Fourier transform spectroscopy is used to determine/control the degree of spectral diffusion
in high-quality site-controlled GaN nanowire quantum dots. Detailed analysis, including the …
in high-quality site-controlled GaN nanowire quantum dots. Detailed analysis, including the …
[HTML][HTML] Density control of GaN quantum dots on AlN single crystal
Full control over the density and emission properties of GaN quantum dots (QDs) should be
feasible, provided that the growth proceeds in the Stranski-Krastanov (SK) growth mode. In …
feasible, provided that the growth proceeds in the Stranski-Krastanov (SK) growth mode. In …
How much better are InGaN/GaN nanodisks than quantum wells—Oscillator strength enhancement and changes in optical properties
We show over 100-fold enhancement of the exciton oscillator strength as the diameter of an
InGaN nanodisk in a GaN nanopillar is reduced from a few micrometers to less than 40 nm …
InGaN nanodisk in a GaN nanopillar is reduced from a few micrometers to less than 40 nm …
Spectral diffusion in nitride quantum dots: Emission energy dependent linewidths broadening via giant built‐in dipole moments
We present a study about the origin of the huge emission linewidths broadening commonly
observed for wurtzite GaN/AlN quantum dots. Our analysis is based on a statistically …
observed for wurtzite GaN/AlN quantum dots. Our analysis is based on a statistically …
Enhancement of Single‐Photon Purity and Coherence of III‐Nitride Quantum Dot with Polarization‐Controlled Quasi‐Resonant Excitation
III‐Nitride semiconductor‐based quantum dots (QDs) play an essential role in solid‐state
quantum light sources because of their potential for room‐temperature operation. However …
quantum light sources because of their potential for room‐temperature operation. However …