The metal–oxide–semiconductor field-effect transistor (MOSFET), a core element of
complementary metal–oxide–semiconductor (CMOS) technology, represents one of the …

Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …

The control of luminous radiation has extremely important implications for modern and future
technologies as well as in medicine. In this Review, we detail chemical structures and their …

Scaling trends of FinFET architecture, with focus on Front-End-of-Line (FEOL), and Middle-of-
Line (MOL) device parameters, is systematically investigated. It is concluded that the …

While there has been growing interest in two-dimensional (2-D) crystals other than
graphene, evaluating their potential usefulness for electronic applications is still in its infancy …

In this article, we experimentally demonstrate that the transport gap of phosphorene can be
tuned monotonically from∼ 0.3 to∼ 1.0 eV when the flake thickness is scaled down from …

Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply
voltage reduces the energy needed for switching, but the field-effect transistors (FETs) in …

Nanowires are filamentary crystals with a tailored diameter that can be obtained using a
plethora of different synthesis techniques. In this review, we focus on the vapor phase …

The negative-capacitance field-effect transistor (NC-FET) has attracted tremendous research
efforts. However, the lack of a clear physical picture and design rule for this device has led to …

Over the past 30 years electronic applications have been dominated by complementary
metal oxide semiconductor (CMOS) devices. These combine p-and n-type field effect …