HfO2 shows promise for emerging ferroelectric and resistive switching (RS) memory devices
owing to its excellent electrical properties and compatibility with complementary metal oxide …

Hafnia-based ferroelectrics and their semiconductor applications are reviewed, focusing on
next-generation dynamic random-access-memory (DRAM) and Flash. The challenges of …

Abstract Ferroelectricity in (Hf, Zr) O 2 films under 10 nm has been correlated with various
factors, including dopant, oxygen deficiency, strain, and surface energy. Owing to their …

The recent discovery of ferroelectric properties in HfO 2 has sparked significant interest in
the fields of nonvolatile memory and neuromorphic computing. Yet, as device scaling …

Since the discovery of ferroelectric switching in hafnium-based thin films, this family of
materials has garnered significant attention. However, their higher coercive field not only …

The integration of ferroelectric-doped HfO2 thin films in advanced memory has been
impeded by high coercive fields (EC), requiring high operation voltages. The extremely …

The discovery of ferroelectricity in HfO2-based thin films has strongly energized the field of
integrated semiconductor devices. To expand the physical applications of HfO2-based thin …

Electrode materials can significantly impact the chemical and physical properties and
polarization switching kinetics of ferroelectric Hf0. 5Zr0. 5O2 (HZO) films deposited through …

HfO2-based thin films have garnered significant interest for integrating robust ferroelectricity
into next-generation memory and logic chips, owing to their applicability with modern Si …

In this work, the formation of the orthorhombic phase of ZrO 2 together with the minor
monoclinic phase were elucidated by X-ray diffraction and transmission electron …