A holistic approach on Junctionless dual material double gate (DMDG) MOSFET with high k gate stack for low power digital applications
The 2D analytical models for electrostatic potential, threshold voltage, subthreshold swing,
Drain Induced Barrier Lowering (DIBL) and drain current of the Dual Material Double Gate …
Drain Induced Barrier Lowering (DIBL) and drain current of the Dual Material Double Gate …
Symmetric operation in an extended back gate JLFET for scaling to the 5-nm regime considering quantum confinement effects
In this paper, we propose a double gate junctionless FET (DGJLFET) with an extended back
gate (EBG) architecture for significantly improved performance in the sub-10-nm regime …
gate (EBG) architecture for significantly improved performance in the sub-10-nm regime …
Subthreshold modeling of tri-gate junctionless transistors with variable channel edges and substrate bias effects
In this paper, subthreshold channel potential, current, swing, threshold voltage, and drain-
induced barrier lowering models of short-channel tri-gate junctionless field-effect transistors …
induced barrier lowering models of short-channel tri-gate junctionless field-effect transistors …
A threshold voltage model of tri-gate junctionless field-effect transistors including substrate bias effects
In this paper, the influence of substrate bias voltage and substrate-induced surface potential
(SISP) on threshold voltage of tri-gate junctionless field-effect transistors (TG-JLFETs) has …
(SISP) on threshold voltage of tri-gate junctionless field-effect transistors (TG-JLFETs) has …
Static and quasi-static drain current modeling of tri-gate junctionless transistor with substrate bias-induced effects
In this paper, a surface potential-based drain current model is developed to explore the
static and quasi-static performance of substrate-biased tri-gate junctionless field-effect …
static and quasi-static performance of substrate-biased tri-gate junctionless field-effect …
Impact of back gate bias on analog performance of do**less transistor
R Kumar, M Panchore - Transactions on Electrical and Electronic Materials, 2023 - Springer
In this brief, the impact of back gate bias (V gb), on analog performance of silicon on
insulator do**less transistor (SOI-DLT) is investigated. It is observed that SOI-DLTs are …
insulator do**less transistor (SOI-DLT) is investigated. It is observed that SOI-DLTs are …
Analytical model for the dynamic behavior of triple-gate junctionless nanowire transistors
This paper presents an analytical model for the intrinsic capacitances and
transconductances of triple-gate junctionless nanowire transistors. The model is based on a …
transconductances of triple-gate junctionless nanowire transistors. The model is based on a …
Junctionless nanowire transistors operation at temperatures down to 4.2 K
The aim of this work is to analyze the operation of junctionless nanowire transistors down to
the liquid helium temperature. The drain current, the transconductance, the output …
the liquid helium temperature. The drain current, the transconductance, the output …
Analysis of the electrical parameters of SOI junctionless nanowire transistors at high temperatures
TA Ribeiro, S Barraud… - IEEE Journal of the …, 2021 - ieeexplore.ieee.org
This work studies the effects of the temperature variation, from 300K to 500K, on the
electrical parameters of SOI n-type and p-type junctionless nanowire transistors. The …
electrical parameters of SOI n-type and p-type junctionless nanowire transistors. The …
The physical mechanism investigation of off-state drain bias TDDB and its implication in advance HK/MG FinFETs
IK Chen, SC Chen, S Mukhopadhyay… - 2018 IEEE …, 2018 - ieeexplore.ieee.org
This work presents a systematic study of the off-state drain bias time dependent dielectric
breakdown (TDDB) mechanism, especially for the short channel transistors in advanced …
breakdown (TDDB) mechanism, especially for the short channel transistors in advanced …