На основе анализа публикаций последних лет для системы Ge-на-Si приводятся
устоявшиеся представления о механизмах образования германиевых островков …

The generally accepted notions about the formation mechanisms for germanium islands with
nanometer-scale sizes in a Ge-on-Si system are reviewed on the basis of analysis of recent …

A systematic study of the thermally induced reaction of 20 transition metals (Ti, Zr, Hf, V, Nb,
Ta, Cr, Mo, W, Mn, Re, Fe, Ru, Co, Rh, Ir, Ni, Pd, Pt, and Cu) with Ge substrates was carried …

A “Roadmap” is an extended look at the future of a chosen field of inquiry composed from
the collective knowledge of researchers in that field. The composition of a roadmap can …

The rapid advancement of the microelectronics industry has continued in nearly exponential
fashion for the past 30 years. Continuous progress has been made in miniaturizing …

The electrodeposition of Ge, Si and, for the first time, of SixGe1− x from the air-and water-
stable ionic liquid 1-butyl-1-methylpyrrolidinium bis (trifluoromethylsulfonyl) amide ([Py1, 4] …

A combination of the materials science, manufacturing processes, and pioneering research
and developments of SiGe and strained-Si have offered an unprecedented high level of …

The current status of the research in the field of synthesis and application of silicon and
germanium-based nanostructures formed by the process of 3D island self-organization is …

Recently, a compact realization of logic gates using double-gate tunnel field effect
transistors (DGTFETs) with independently-controlled gate has been proposed. The key …

Diameter-dependent compositions of Si1-x Ge x nanowires grown by a vapor− liquid− solid
mechanism using SiH4 and GeH4 precursors are studied by transmission electron …