Nanowires are filamentary crystals with a tailored diameter that can be obtained using a
plethora of different synthesis techniques. In this review, we focus on the vapor phase …

Semiconductor nanowires have demonstrated exciting properties for nanophotonics,
sensors, energy technologies, and end-of-roadmap and beyond-roadmap electronic …

Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and
near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant …

Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been
intensively studied in the past decade. Unique to this material system is that its energy …

In recent years, GaN nanorods are emerging as a very promising novel route toward devices
for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices …

Abstract In recent years, Gallium Nitride (GaN) has been established as a material of choice
for high power switching, high power RF and lighting applications. In c-direction, depending …

Conventional InGaN/GaN light-emitting diodes based on planar quantum well structures do
not allow for efficient long-wavelength operation beyond the blue region due to a strong …

The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence
of a spontaneous electric polarization within these materials and their associated alloys (Ga …

The growth of highly uniform arrays of GaN nanocolumns with diameters from 122 to 430 nm
on Si (111) substrates was demonstrated. The employment of GaN film templates with flat …

III-V nanowires (NWs) are promising for a wide range of applications, ranging from optics to
electronics, energy, and biological sensing. The structural quality of NWs is of paramount …