SnO2: A comprehensive review on structures and gas sensors
S Das, V Jayaraman - Progress in Materials Science, 2014 - Elsevier
Metal oxides possess exceptional potential as base materials in emerging technologies. In
recent times, significant amount of research works is carried out on these materials to assess …
recent times, significant amount of research works is carried out on these materials to assess …
[책][B] The kp method: electronic properties of semiconductors
LCLY Voon, M Willatzen - 2009 - books.google.com
I? rst heard of k· p in a course on semiconductor physics taught by my thesis adviser William
Paul at Harvard in the fall of 1956. He presented the k· p Hamiltonian as a semiempirical …
Paul at Harvard in the fall of 1956. He presented the k· p Hamiltonian as a semiempirical …
Ink‐based additive nanomanufacturing of functional materials for human‐integrated smart wearables
S Xu, W Wu - Advanced Intelligent Systems, 2020 - Wiley Online Library
The economical, agile, customizable manufacturing, and integration of multifunctional
device modules into networked systems with mechanical compliance and robustness …
device modules into networked systems with mechanical compliance and robustness …
Exciton-phonon coupling in individual ZnTe nanorods studied by resonant Raman spectroscopy
The exciton-phonon coupling in high-quality cubic phase zinc telluride (ZnTe) nanorods
(NRs) is investigated by resonant micro-Raman spectroscopy near the direct bandgap of …
(NRs) is investigated by resonant micro-Raman spectroscopy near the direct bandgap of …
Chemical vapor deposition growth of silicon nanowires with diameter smaller than 5 nm
Quantum confinement effects in silicon nanowires (SiNWs) are expected when their
diameter is less than the size of the free exciton (with a Bohr radius∼ 5 nm) in bulk silicon …
diameter is less than the size of the free exciton (with a Bohr radius∼ 5 nm) in bulk silicon …
Enhanced light extraction efficiency of GaN-based light-emitting diodes with ZnO nanorod arrays grown using aqueous solution
We report a dramatic increase in the light extraction efficiency of GaN-based blue light-
emitting diodes (LEDs) by ZnO nanorod arrays on a planar indium tin oxide (ITO) …
emitting diodes (LEDs) by ZnO nanorod arrays on a planar indium tin oxide (ITO) …
Analysis of triple metal surrounding gate (TM-SG) III–V nanowire MOSFET for photosensing application
In this paper, a low power highly sensitive Triple Metal Surrounding Gate (TM-SG) Nanowire
MOSFET photosensor is proposed which uses triple metal gates for controlling short …
MOSFET photosensor is proposed which uses triple metal gates for controlling short …
Ultrafast carrier dynamics in semiconductor nanowires
Semiconductor nanowires (NWs) are nanostructures with a number of novel optical and
electronic properties that offer great promise for applications in areas including …
electronic properties that offer great promise for applications in areas including …
Origination of the direct-indirect band gap transition in strained wurtzite and zinc-blende GaAs nanowires: A first principles study
Recent work [Appl. Phys. Lett. 100, 193108 (2012) APPLAB 0003-6951 10.1063/1.4718026]
has demonstrated that uniaxial strain applied to wurtzite (WZ) GaAs nanowires leads to an …
has demonstrated that uniaxial strain applied to wurtzite (WZ) GaAs nanowires leads to an …
Electromechanical field effects in InAs/GaAs quantum dots based on continuum k→· p→ and atomistic tight-binding methods
A comparison between k→· p→ and tight-binding methods for the analysis of InAs/GaAs
quantum dot bandstructures is presented based on a fully coupled computation of …
quantum dot bandstructures is presented based on a fully coupled computation of …