A new generation of high-efficiency power devices is being developed using wide bandgap
(WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to …

In this review, the structural, mechanical, thermal, and chemical properties of substrates
used for gallium nitride (GaN) epitaxy are compiled, and the properties of GaN films …

Recent advances in the theory and experimental realization of ferromagnetic
semiconductors give hope that a new generation of microelectronic devices based on the …

Application of semiconductors as electric and optoelectronic devices depends critically on
their dopability. Failure to dope a material, ie, to produce enough free charge carriers …

The recent advances in artificial intelligence point to a dramatic acceleration in the pace of
technological evolution. In their never-ending quest to push the boundaries of what is now …

The applications of molecular surface chemistry in heterogeneous catalyst technology,
semiconductor-based technology, medical technology, anticorrosion and lubricant …

There is renewed emphasis on development of robust solid-state sensors capable of
uncooled operation in harsh environments. The sensors should be capable of detecting …

A review of the effectsof proton, neutron, γ-ray, and electron irradiation on GaN materials
and devices is presented. Neutron irradiation tends to create disordered regions in the GaN …

The high increase in interface density has become the main bottleneck for heat dissipation
in gallium nitride/aluminum nitride (AlN)/silicon carbide (SiC) based nanodevices. In this …

During the last 30 years, significant progress has been made to improve our understanding
of gallium nitride and silicon carbide device structures, resulting in experimental …