Solution-processed two-dimensional materials for next-generation photovoltaics
In the ever-increasing energy demand scenario, the development of novel photovoltaic (PV)
technologies is considered to be one of the key solutions to fulfil the energy request. In this …
technologies is considered to be one of the key solutions to fulfil the energy request. In this …
Sub-10 nm two-dimensional transistors: Theory and experiment
Presently Si-based field-effect transistors (FETs) are approaching their physical limit, and
further scaling their gate length down to the sub-10 nm region is becoming extremely …
further scaling their gate length down to the sub-10 nm region is becoming extremely …
Sub-10 nm fabrication: methods and applications
Reliable fabrication of micro/nanostructures with sub-10 nm features is of great significance
for advancing nanoscience and nanotechnology. While the capability of current …
for advancing nanoscience and nanotechnology. While the capability of current …
Valley pseudospin in monolayer and
For a long time, two-dimensional (2D) hexagonal MoS 2 was proposed as a promising
material for the valleytronic system. However, the limited size of growth and low carrier …
material for the valleytronic system. However, the limited size of growth and low carrier …
2D MoS2 Neuromorphic Devices for Brain‐Like Computational Systems
J Jiang, J Guo, X Wan, Y Yang, H **e, D Niu, J Yang… - Small, 2017 - Wiley Online Library
Hardware implementation of artificial synapses/neurons with 2D solid‐state devices is of
great significance for nanoscale brain‐like computational systems. Here, 2D MoS2 …
great significance for nanoscale brain‐like computational systems. Here, 2D MoS2 …
High-performance sub-10 nm monolayer Bi 2 O 2 Se transistors
A successful two-dimensional (2D) semiconductor successor of silicon for high-performance
logic in the post-silicon era should have both excellent performance and air stability …
logic in the post-silicon era should have both excellent performance and air stability …
Toward sustainable ultrawide bandgap van der Waals materials: An ab initio screening effort
The sustainable development of next‐generation device technology is paramount in the face
of climate change and the looming energy crisis. Tremendous effort is made in the discovery …
of climate change and the looming energy crisis. Tremendous effort is made in the discovery …
Many-body effect, carrier mobility, and device performance of hexagonal arsenene and antimonene
Two-dimensional (2D) semiconductors are very promising channel materials in next-
generation field effect transistors (FETs) due to the enhanced gate electrostatics and smooth …
generation field effect transistors (FETs) due to the enhanced gate electrostatics and smooth …
Simulations of quantum transport in sub-5-nm monolayer phosphorene transistors
R Quhe, Q Li, Q Zhang, Y Wang, H Zhang, J Li… - Physical Review …, 2018 - APS
Two-dimensional (2D) semiconductors, eg, Mo S 2 and phosphorene, are promising
candidates for the channel materials of next-generation field-effect transistors (FETs) …
candidates for the channel materials of next-generation field-effect transistors (FETs) …
Low Variability in Synthetic Monolayer MoS2 Devices
Despite much interest in applications of two-dimensional (2D) fabrics such as MoS2, to date
most studies have focused on single or few devices. Here we examine the variability of …
most studies have focused on single or few devices. Here we examine the variability of …