Fermi level pinning dependent 2D semiconductor devices: challenges and prospects
Motivated by the high expectation for efficient electrostatic modulation of charge transport at
very low voltages, atomically thin 2D materials with a range of bandgaps are investigated …
very low voltages, atomically thin 2D materials with a range of bandgaps are investigated …
Fermi-level depinning of 2D transition metal dichalcogenide transistors
Recently, mainstream silicon (Si)-based materials and complementary metal oxide
semiconductor (CMOS) technology have been used in develo** extremely tiny sized (of a …
semiconductor (CMOS) technology have been used in develo** extremely tiny sized (of a …
van der Waals Contact for Two-Dimensional Transition Metal Dichalcogenides
L Ma, Y Wang, Y Liu - Chemical Reviews, 2024 - ACS Publications
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as highly
promising candidates for next-generation electronics owing to their atomically thin structures …
promising candidates for next-generation electronics owing to their atomically thin structures …
[HTML][HTML] Energetic bombardment and defect generation during magnetron-sputter-deposition of metal layers on graphene
In the present work, we elucidate the interplay among energetic bombardment effects in
magnetron sputtering and defect generation in two-dimensional (2D) materials. Using …
magnetron sputtering and defect generation in two-dimensional (2D) materials. Using …
Getting two-dimensional materials ready for industrial manufacturing
Getting two-dimensional materials ready for industrial manufacturing | Nature Electronics
Skip to main content Thank you for visiting nature.com. You are using a browser version …
Skip to main content Thank you for visiting nature.com. You are using a browser version …
Control-gate-free reconfigurable transistor based on 2D MoTe2 with asymmetric gating
As transistor footprint scales down to the sub-10 nm regime, the process development for
advancing to further technology nodes has encountered slowdowns. Achieving greater …
advancing to further technology nodes has encountered slowdowns. Achieving greater …
2D Ambipolar Vertical Transistors as Control-free Reconfigurable Logic Devices
As transistor footprint scales down to sub-10 nm regime, the process development for
advancing to further technology nodes has encountered slowdowns. Achieving greater …
advancing to further technology nodes has encountered slowdowns. Achieving greater …