Thin‐Film Transistors for Integrated Circuits: Fundamentals and Recent Progress

A Yan, C Wang, J Yan, Z Wang, E Zhang… - Advanced Functional …, 2024 - Wiley Online Library
High‐performance thin‐film transistors (TFTs) integrated circuits (ICs) have become
increasingly necessary to meet the emerging demands such as healthcare, edge computing …

Recent developments in p‐Type oxide semiconductor materials and devices

Z Wang, PK Nayak, JA Caraveo‐Frescas… - Advanced …, 2016 - Wiley Online Library
The development of transparent p‐type oxide semiconductors with good performance may
be a true enabler for a variety of applications where transparency, power efficiency, and …

Simplified interconnection structure based on C60/SnO2-x for all-perovskite tandem solar cells

Z Yu, Z Yang, Z Ni, Y Shao, B Chen, Y Lin, H Wei… - Nature Energy, 2020 - nature.com
The efficiencies of all-perovskite tandem devices are improving quickly. However, their
complex interconnection layer (ICL) structures—with typically four or more layers deposited …

Oxide semiconductor thin‐film transistors: a review of recent advances

E Fortunato, P Barquinha, R Martins - Advanced materials, 2012 - Wiley Online Library
Transparent electronics is today one of the most advanced topics for a wide range of device
applications. The key components are wide bandgap semiconductors, where oxides of …

Semiconductor-metal-oxide-based nano-composites for humidity sensing applications

A Kumar, G Gupta, K Bapna, DD Shivagan - Materials Research Bulletin, 2023 - Elsevier
Humidity sensing is of great significance in agriculture, pharmaceutical, medical,
environmental, etc. Among various types of materials, semiconductor metal oxides (SMOs) …

Design and exploration of semiconductors from first principles: A review of recent advances

F Oba, Y Kumagai - Applied Physics Express, 2018 - iopscience.iop.org
Recent first-principles approaches to semiconductors are reviewed, with an emphasis on
theoretical insight into emerging materials and in silico exploration of as-yet-unreported …

Multiferroic two-dimensional materials

L Seixas, AS Rodin, A Carvalho, AH Castro Neto - Physical review letters, 2016 - APS
The relation between unusual Mexican-hat band dispersion, ferromagnetism, and
ferroelasticity is investigated using a combination of analytical, first-principles, and …

p-channel thin-film transistor using p-type oxide semiconductor, SnO

Y Ogo, H Hiramatsu, K Nomura, H Yanagi… - Applied Physics …, 2008 - pubs.aip.org
This paper reports that among known p-type oxide semiconductors, tin monoxide (SnO) has
a high hole mobility and produces good p-type oxide thin-film transistors (TFTs). Device …

Record mobility in transparent p-type tin monoxide films and devices by phase engineering

JA Caraveo-Frescas, PK Nayak, HA Al-Jawhari… - ACS …, 2013 - ACS Publications
Here, we report the fabrication of nanoscale (15 nm) fully transparent p-type SnO thin film
transistors (TFT) at temperatures as low as 180° C with record device performance …

Solution-processable metal oxide semiconductors for thin-film transistor applications

SR Thomas, P Pattanasattayavong… - Chemical Society …, 2013 - pubs.rsc.org
Solution-processable metal oxide semiconductors for thin-film transistor applications -
Chemical Society Reviews (RSC Publishing) DOI:10.1039/C3CS35402D Royal Society of …