Enhanced In incorporation in full InGaN heterostructure grown on relaxed InGaN pseudo-substrate
A Even, G Laval, O Ledoux, P Ferret, D Sotta… - Applied Physics …, 2017 - pubs.aip.org
The impact of a relaxed InGaN pseudosubstrate on indium incorporation in a full InGaN
heterostructure was investigated. Three types of InGaN pseudosubstrates were tested with …
heterostructure was investigated. Three types of InGaN pseudosubstrates were tested with …
Electrically injected GHz-class GaN/InGaN core–shell nanowire-based μLEDs: carrier dynamics and nanoscale homogeneity
We present the first demonstration of RF characteristics of electrically injected GaN/InGaN
core–shell nanowire-based micro light-emitting diodes (μLEDs) for μLED displays and …
core–shell nanowire-based micro light-emitting diodes (μLEDs) for μLED displays and …
[HTML][HTML] Electronic and optical properties of boron-containing GaN alloys: The role of boron atom clustering
Boron (B) containing III-nitride materials, such as wurtzite (wz)(B, Ga) N alloys, have recently
attracted significant interest due to their ability to tailor the electronic and optical properties of …
attracted significant interest due to their ability to tailor the electronic and optical properties of …
[HTML][HTML] What is red? On the chromaticity of orange-red InGaN/GaN based LEDs
The full width at half maximum (FWHM) of the luminescence of visible InGaN quantum well
(QW) based emitters increases with wavelength. This broadening of the luminescence …
(QW) based emitters increases with wavelength. This broadening of the luminescence …
A novel model on time-resolved photoluminescence measurements of polar InGaN/GaN multi-quantum-well structures
Y ** III-nitride optoelectronics on silicon substrates, it
is necessary to compare the growth and optical properties of III-nitride optoelectronics such …
is necessary to compare the growth and optical properties of III-nitride optoelectronics such …
Internal quantum efficiency and Auger recombination in green, yellow and red InGaN-based light emitters grown along the polar direction
We comparatively study the onset of photo-induced non-radiative intrinsic Auger
recombination processes for red, yellow and green light emitting InGaNsingle bond GaN …
recombination processes for red, yellow and green light emitting InGaNsingle bond GaN …