It is now possible to grow high-quality strained-layer superlattices, in which individual layers
are composed of semiconductor materials which would normally have significantly different …

This paper reviews recent advances in our current level of understanding of the physics
underlying transport and optical properties of Ge x Si 1-x/Si strained-layer heterostructures …

A review is given on the formation mechanisms and the properties of Si/Ge nanostructures
that have been synthesized by self-assembling and self-ordering during heteroepitaxy …

With recent developments in high‐speed and high‐power electronics and Si‐based
photonic integration, the concept of monolithic III–V/Si integration through epitaxial methods …

Following the past seventeen-year developmental path in the research of semiconductor
superlattices and quantum wells, significant milestones are presented with emphasis on …

We present a critical review of the strategies used in the fabrication of mismatched
semiconductor heterostructures. By using simple concepts derived from the Matthews model …

The use of strained layer epitaxy to grow high-quality Ge/sub x/Si/sub 1-x//Si
heterostructures and their application to a wide range of heterostructure devices are …

We theoretically study and experimentally demonstrate a pseudomorphic Ge/Ge0. 92Sn0.
08/Ge quantum-well microdisk resonator on Ge/Si (001) as a route toward a compact GeSn …

A critical review of the different theoretical models proposed for explaining the metal-
semiconductor and semiconductor-semiconductor interfaces is presented. Although no …

Si/Si/sub 1-x/Ge/sub x//Si NpN heterojunction bipolar transistors (HBTs) produced by a
chemical vapor deposition technique, limited-reaction processing, were analyzed using …