Noise and Defects in Microelectronic Materials and Devices
DM Fleetwood - IEEE Transactions on Nuclear Science, 2015 - ieeexplore.ieee.org
This paper reviews and compares predictions of the Dutta-Horn model of low-frequency
excess (1/f) noise with experimental results for thin metal films, MOS transistors, and …
excess (1/f) noise with experimental results for thin metal films, MOS transistors, and …
Total-Ionizing-Dose Effects, Border Traps, and 1/f Noise in Emerging MOS Technologies
DM Fleetwood - IEEE Transactions on Nuclear Science, 2020 - ieeexplore.ieee.org
Subthreshold leakage currents and threshold-voltage shifts due to total-ionizing-dose (TID)
irradiation are reviewed briefly for highly scaled devices in emerging MOS technologies …
irradiation are reviewed briefly for highly scaled devices in emerging MOS technologies …
Interface traps, correlated mobility fluctuations, and low-frequency noise in metal–oxide–semiconductor transistors
DM Fleetwood - Applied Physics Letters, 2023 - pubs.aip.org
Interface traps generally are not considered to be likely sources of low-frequency (LF) noise
and/or random telegraph noise (RTN) in metal–oxide–semiconductor (MOS) devices …
and/or random telegraph noise (RTN) in metal–oxide–semiconductor (MOS) devices …
Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs With SiO2/HfO2 Gate Dielectrics
M Gorchichko, Y Cao, EX Zhang, D Yan… - … on Nuclear Science, 2019 - ieeexplore.ieee.org
Total-ionizing-dose (TID) effects and low-frequency noise are evaluated in 30-nm gate-
length bulk and silicon-on-insulator (SOI) FinFETs for devices with fin widths of 10-40 nm …
length bulk and silicon-on-insulator (SOI) FinFETs for devices with fin widths of 10-40 nm …
Investigation of total ionizing dose effects in 4H–SiC power MOSFET under gamma ray radiation
Y Sun, X Wan, Z Liu, H **, J Yan, X Li, Y Shi - Radiation Physics and …, 2022 - Elsevier
In this work, the gamma ray radiation-induced total ionizing dose (TID) effects in SiC power
MOSFETs are investigated. The transistor characteristics, such as transfer curve, output …
MOSFETs are investigated. The transistor characteristics, such as transfer curve, output …
Random telegraph noise in nanometer-scale CMOS transistors exposed to ionizing radiation
S Bonaldo, DM Fleetwood - Applied Physics Letters, 2023 - pubs.aip.org
Nanometer-scale transistors often exhibit random telegraph noise (RTN) with high device-to-
device variability. Recent experiments up to Grad total ionizing dose (TID) demonstrate …
device variability. Recent experiments up to Grad total ionizing dose (TID) demonstrate …
Total-Ionizing-Dose Effects and Low-Frequency Noise in 16-nm InGaAs FinFETs With HfO2/Al2O3 Dielectrics
Total-ionizing-dose mechanisms are investigated in 16-nm InGaAs FinFETs with an HfO 2/Al
2 O 3 gate-stack. Transistors are irradiated up to 500 krad (SiO 2) and annealed at high …
2 O 3 gate-stack. Transistors are irradiated up to 500 krad (SiO 2) and annealed at high …
Defects and Low-Frequency Noise in Irradiated Black Phosphorus MOSFETs With HfO2 Gate Dielectrics
We have evaluated radiation-induced charge trap** and low-frequency noise in
passivated black phosphorus (BP) MOSFETs with HfO 2 gate dielectrics. Thinning the gate …
passivated black phosphorus (BP) MOSFETs with HfO 2 gate dielectrics. Thinning the gate …
Review of methodologies for evaluating short-circuit robustness and reliability of SiC power MOSFETs
To accelerate the broad application of silicon carbide (SiC) power MOSFETs, their short-
circuit (SC) robustness and reliability must be thoroughly evaluated. This article, therefore …
circuit (SC) robustness and reliability must be thoroughly evaluated. This article, therefore …
Gate bias and length dependences of total ionizing dose effects in InGaAs FinFETs on bulk Si
We evaluate the total ionizing dose (TID) responses of InGaAs nMOS FinFETs with different
gate lengths irradiated with 10-keV X-rays under different gate biases. The largest …
gate lengths irradiated with 10-keV X-rays under different gate biases. The largest …