High-sensitivity and high-bandwidth receivers are always demanded for high-speed optical
link systems. As a key element, an avalanche photodiode (APD) is often regarded as one of …

By using the flip-chip bonding technology, a high performances 3D-integrated silicon
photonics receiver is demonstrated. The receiver consists of a high-speed germanium …

Germanium (Ge)-silicon (Si)-based avalanche photodetectors (APDs) featured by a high
absorption coefficient in the near-infrared band have gained wide applications in laser …

Avalanche photodetectors (APDs) featuring an avalanche multiplication region are vital for
reaching high sensitivity and responsivity in optical transceivers. Waveguide-coupled Ge-on …

A high-performance waveguide-coupled lateral avalanche photodetector (APD) is
experimentally demonstrated without silicon epitaxy and charge layer ion implantation. At …

Photodetectors with broad spectral response and high responsivity demonstrate significant
potential in optoelectronic applications. This study proposes a Si/Ge avalanche photodiode …

We present the design of Ge/Si avalanche photodetectors with SiN stressor-induced Ge
strain for the C+ L band light detection. By optimizing the placement position and thickness …

A top-illuminated Ge-on-Si avalanche photodiode is designed and fabricated in
GlobalFoundries' 45-nm SOI platform (Si Photonic). The device utilizes an annular-shaped …

This<? TeX 2pc 0pt?> paper presents the test results for high-performance and high-
uniformity waveguide silicon-based germanium (Ge) photodetectors (PDs) for the O band …

Tin-doped germanium quantum dots (Sn-doped Ge QDs)-decorated hexagonal silicon
nanowires (h-Si NWs) were adopted to overcome the low infrared response of silicon and …