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Advancements and Hurdles in Contact Engineering for Miniaturized Sub-Micrometer Oxide Semiconductor Devices
With conventional silicon-based devices approaching their physical scaling limits,
alternative channel materials, such as transition metal dichalcogenides and oxide …
alternative channel materials, such as transition metal dichalcogenides and oxide …
Wafer-Scale Atomic Layer-Deposited TeOx/Te Heterostructure P-Type Thin-Film Transistors
There is an increasing demand for p-type semiconductors with scalable growth, excellent
device performance, and back-end-of-line (BEOL) compatibility. Recently, tellurium (Te) has …
device performance, and back-end-of-line (BEOL) compatibility. Recently, tellurium (Te) has …
Electronic Impact of High-Energy Metal Deposition on Ultrathin Oxide Semiconductors
YY Pan, MJ Kuo, SC Chen, T Ahmed, R Tseng… - Nano …, 2025 - ACS Publications
High-energy metal deposition significantly impacts the performance and reliability of two-
dimensional (2D) semiconductors and nanodevices. This study investigates the localized …
dimensional (2D) semiconductors and nanodevices. This study investigates the localized …
Highly Robust All-Oxide Transistors Toward Vertical Logic and Memory
In this work, we report atomic-layer-deposited (ALD) based all-oxide transistors toward
vertically stacked high-density logic and memory for 3-D integration. This structure utilizes …
vertically stacked high-density logic and memory for 3-D integration. This structure utilizes …
Ultralow Voltage Operation of p-and n-FETs Enabled by Self-Formed Gate Dielectric and Metal Contacts on 2D Tellurium
The ongoing demand for more energy-efficient, high-performance electronics is driving the
exploration of innovative materials and device architectures, where interfaces play a crucial …
exploration of innovative materials and device architectures, where interfaces play a crucial …
Ab Initio Device-Driven Screening of Sub-1-nm Thickness Oxide Semiconductors for Future CMOS Technology Nodes
Ultrathin oxide semiconductors with sub-1-nm thickness are promising building blocks for
ultrascaled field-effect transistor (FET) applications due to their resilience against short …
ultrascaled field-effect transistor (FET) applications due to their resilience against short …