Proximitized materials

I Žutić, A Matos-Abiague, B Scharf, H Dery… - Materials Today, 2019 - Elsevier
Advances in scaling down heterostructures and having an improved interface quality
together with atomically thin two-dimensional materials suggest a novel approach to …

Hybrid spintronic materials: Growth, structure and properties

W Liu, PKJ Wong, Y Xu - Progress in Materials Science, 2019 - Elsevier
Spintronics is an emergent interdisciplinary topic for the studies of spin-based, other than or
in addition to charge-only-based physical phenomena. Since the discovery of giant …

Magnetic proximity effects in transition-metal dichalcogenides: converting excitons

B Scharf, G Xu, A Matos-Abiague, I Žutić - Physical review letters, 2017 - APS
The two-dimensional character and reduced screening in monolayer transition-metal
dichalcogenides (TMDs) lead to the ubiquitous formation of robust excitons with binding …

Chirality‐induced magnet‐free spin generation in a semiconductor

T Liu, Y Adhikari, H Wang, Y Jiang, Z Hua… - Advanced …, 2024 - Wiley Online Library
Electrical generation and transduction of polarized electron spins in semiconductors (SCs)
are of central interest in spintronics and quantum information science. While spin generation …

Silicon spintronics: Progress and challenges

V Sverdlov, S Selberherr - Physics Reports, 2015 - Elsevier
Electron spin attracts much attention as an alternative to the electron charge degree of
freedom for low-power reprogrammable logic and non-volatile memory applications. Silicon …

Experimental Demonstration of Room-Temperature Spin Transport in -Type Germanium Epilayers

S Dushenko, M Koike, Y Ando, T Shinjo, M Myronov… - Physical review …, 2015 - APS
We report an experimental demonstration of room-temperature spin transport in n-type Ge
epilayers grown on a Si (001) substrate. By utilizing spin pum** under ferromagnetic …

Impurity-assisted tunneling magnetoresistance under a weak magnetic field

O Txoperena, Y Song, L Qing, M Gobbi, LE Hueso… - Physical Review Letters, 2014 - APS
Injection of spins into semiconductors is essential for the integration of the spin functionality
into conventional electronics. Insulating layers are often inserted between ferromagnetic …

Spin relaxation through lateral spin transport in heavily doped -type silicon

M Ishikawa, T Oka, Y Fujita, H Sugiyama, Y Saito… - Physical Review B, 2017 - APS
We experimentally study temperature-dependent spin relaxation including lateral spin
diffusion in heavily doped n-type silicon (n+-Si) layers by measuring nonlocal …

Origin of the magnetoresistance in oxide tunnel junctions determined through electric polarization control of the interface

H Inoue, AG Swartz, NJ Harmon, T Tachikawa, Y Hikita… - Physical Review X, 2015 - APS
The observed magnetoresistance (MR) in three-terminal (3T) ferromagnet-nonmagnet (FM-
NM) tunnel junctions has historically been assigned to ensemble dephasing (Hanle effect) of …

Large spin accumulation voltages in epitaxial contacts on Ge without an oxide tunnel barrier

A Spiesser, H Saito, R Jansen, S Yuasa, K Ando - Physical Review B, 2014 - APS
Spin injection in high-quality epitaxial M n 5 G e 3 Schottky contacts on n-type Ge has been
investigated using a three-terminal Hanle effect measurement. Clear Hanle and inverted …