Proximitized materials
Advances in scaling down heterostructures and having an improved interface quality
together with atomically thin two-dimensional materials suggest a novel approach to …
together with atomically thin two-dimensional materials suggest a novel approach to …
Hybrid spintronic materials: Growth, structure and properties
Spintronics is an emergent interdisciplinary topic for the studies of spin-based, other than or
in addition to charge-only-based physical phenomena. Since the discovery of giant …
in addition to charge-only-based physical phenomena. Since the discovery of giant …
Magnetic proximity effects in transition-metal dichalcogenides: converting excitons
The two-dimensional character and reduced screening in monolayer transition-metal
dichalcogenides (TMDs) lead to the ubiquitous formation of robust excitons with binding …
dichalcogenides (TMDs) lead to the ubiquitous formation of robust excitons with binding …
Chirality‐induced magnet‐free spin generation in a semiconductor
Electrical generation and transduction of polarized electron spins in semiconductors (SCs)
are of central interest in spintronics and quantum information science. While spin generation …
are of central interest in spintronics and quantum information science. While spin generation …
Silicon spintronics: Progress and challenges
Electron spin attracts much attention as an alternative to the electron charge degree of
freedom for low-power reprogrammable logic and non-volatile memory applications. Silicon …
freedom for low-power reprogrammable logic and non-volatile memory applications. Silicon …
Experimental Demonstration of Room-Temperature Spin Transport in -Type Germanium Epilayers
We report an experimental demonstration of room-temperature spin transport in n-type Ge
epilayers grown on a Si (001) substrate. By utilizing spin pum** under ferromagnetic …
epilayers grown on a Si (001) substrate. By utilizing spin pum** under ferromagnetic …
Impurity-assisted tunneling magnetoresistance under a weak magnetic field
Injection of spins into semiconductors is essential for the integration of the spin functionality
into conventional electronics. Insulating layers are often inserted between ferromagnetic …
into conventional electronics. Insulating layers are often inserted between ferromagnetic …
Spin relaxation through lateral spin transport in heavily doped -type silicon
M Ishikawa, T Oka, Y Fujita, H Sugiyama, Y Saito… - Physical Review B, 2017 - APS
We experimentally study temperature-dependent spin relaxation including lateral spin
diffusion in heavily doped n-type silicon (n+-Si) layers by measuring nonlocal …
diffusion in heavily doped n-type silicon (n+-Si) layers by measuring nonlocal …
Origin of the magnetoresistance in oxide tunnel junctions determined through electric polarization control of the interface
The observed magnetoresistance (MR) in three-terminal (3T) ferromagnet-nonmagnet (FM-
NM) tunnel junctions has historically been assigned to ensemble dephasing (Hanle effect) of …
NM) tunnel junctions has historically been assigned to ensemble dephasing (Hanle effect) of …
Large spin accumulation voltages in epitaxial contacts on Ge without an oxide tunnel barrier
Spin injection in high-quality epitaxial M n 5 G e 3 Schottky contacts on n-type Ge has been
investigated using a three-terminal Hanle effect measurement. Clear Hanle and inverted …
investigated using a three-terminal Hanle effect measurement. Clear Hanle and inverted …