An overview of GaN FET technology, reliability, radiation and market for future space application
M Carbone, K Hirche, S Morand… - 2019 European …, 2019 - ieeexplore.ieee.org
GaN technology has gained interest and is becoming widely commercially available due to
their superior performances in power conversion applications. The paper shall promote the …
their superior performances in power conversion applications. The paper shall promote the …
A fast overcurrent protection scheme for GaN GITs
A fast overcurrent protection scheme was developed for GaN gate injection transistors
(GITs), harnessing the relationship between the externally measured vgs and id in steady …
(GITs), harnessing the relationship between the externally measured vgs and id in steady …
Investigation on the long-term reliability of high-voltage p-GaN HEMT by repetitively transient overcurrent
In this paper, the effects of repetitively transient overcurrent on the long-term reliability of
commercial p-GaN high-electron-mobility-transistors (HEMTs) are investigated by using …
commercial p-GaN high-electron-mobility-transistors (HEMTs) are investigated by using …
Short circuit study of 600 V GaN GITs
The short-circuit robustness of 600 V/30 A GaN gate injection transistors (GITs) was
evaluated under various operating conditions to determine the worst-case short-circuit …
evaluated under various operating conditions to determine the worst-case short-circuit …
Characterization methodology, modeling, and converter design for 600 V enhancement-mode GaN FETs
EA Jones - 2018 - trace.tennessee.edu
Abstract Gallium Nitride (GaN) power devices are an emerging technology that have only
become available commercially in the past few years. This new technology enables the …
become available commercially in the past few years. This new technology enables the …
Investigation of boiling behaviors in vapor chambers in response to transient heat input profiles
Vapor chambers are being increasingly utilized as passive heat spreaders in various high-
power density thermal management architectures. Particularly, in applications involving …
power density thermal management architectures. Particularly, in applications involving …
Characterization and Failure Mechanism Study of Ohmic Gate GaN HEMT under Overcurrent Stress
X Jiang, J Chen, S Yuan, Z Yan, X Gong… - 2024 IEEE 10th …, 2024 - ieeexplore.ieee.org
This paper investigates ohmic gate P-GaN HEMTs' overcurrent capabilities and the
associated failure mechanisms through single pulse overcurrent conduction stress …
associated failure mechanisms through single pulse overcurrent conduction stress …
Short circuit capability and degradation mechanism analysis of e-mode GaN HEMT
X Li - 2017 - rave.ohiolink.edu
Abstract Gallium Nitride High Electron Mobility Transistor (GaN HEMT) has become one of
the most attractive power transistors in recent years due to its superior electrical and thermal …
the most attractive power transistors in recent years due to its superior electrical and thermal …
Analysis of Commercial GaN HEMTs in Overcurrent Operation
Gallium nitride (GaN) high electron mobility transistors (HEMTs) are an ideal option in
applications of power electronics due to the wide-bandgap properties of the material. High …
applications of power electronics due to the wide-bandgap properties of the material. High …
Investigation of high voltage pulsers for ultrasound
T Žaromskis - 2021 - epubl.ktu.edu
Abstract [eng] The use of ultrasound in non-invasive research and measurements is a
common practice in material science. To generate ultrasound ultrasonic transducers are …
common practice in material science. To generate ultrasound ultrasonic transducers are …