Silicides and germanides are compounds consisting of a metal and silicon or germanium. In
the microelectronics industry, silicides are the material of choice for contacting silicon based …

The effects of multi-element do** on mechanical and electrical properties of C7035
copper alloy were investigated by first principles calculation and experiment based on …

The controlled formation of silicide materials is an ongoing challenge to facilitate the
electrical contact of Si-based transistors. Due to the ongoing miniaturisation of the transistor …

NiSi thin films are extensively used in advanced semiconductor devices due to their
desirable electrical properties. Recently, the incorporation of platinum (Pt) into NiSi thin …

The Ni monosilicide alloyed with Pt is widely used as contact material in advanced
microelectronics devices and a good knowledge of silicide formation kinetics is required for …

Ni silicides used as contacts in source/drain and gate of advanced CMOS devices were
analyzed by atom probe tomography (APT) at atomic scale. These measurements were …

Ni-Pt alloys are employed in the formation of Ni-Pt silicide to facilitate contact and
interconnection functions in semiconductor devices. However, the formation of nodules on …

During the deposition of a Ni film on a Si substrate, an intermixed layer usually forms at the
Ni/Si interface. In this work, the influence of Pt incorporation in this intermixed layer on the …

The first stages of the growth of the NiSi phase at the expense of θ-Ni 2 Si have been
studied mainly by in-situ XRD measurements and atom probe tomography (APT) analysis. In …

The Ni/Si reactive multilayer (RML) is full of application potentials including reactive joining,
igniters, and power sources. Here, the Ni/Si RMLs with atomic ratios of Ni and Si (2: 1, 1: 1 …