Prospects and applications of on-chip lasers

Z Zhou, X Ou, Y Fang, E Alkhazraji, R Xu, Y Wan… - elight, 2023 - Springer
Integrated silicon photonics has sparked a significant ramp-up of investment in both
academia and industry as a scalable, power-efficient, and eco-friendly solution. At the heart …

Recent advances in light sources on silicon

Y Han, H Park, J Bowers, KM Lau - Advances in Optics and Photonics, 2022 - opg.optica.org
Realizing efficient on-chip light sources has long been the “holy-grail” for Si-photonics
research. Several important breakthroughs were made in this field in the past few years. In …

Direct bandgap quantum wells in hexagonal Silicon Germanium

WHJ Peeters, VT van Lange, A Belabbes… - Nature …, 2024 - nature.com
Silicon is indisputably the most advanced material for scalable electronics, but it is a poor
choice as a light source for photonic applications, due to its indirect band gap. The recently …

Monolithic infrared silicon photonics: The rise of (Si) GeSn semiconductors

O Moutanabbir, S Assali, X Gong, E O'Reilly… - Applied Physics …, 2021 - pubs.aip.org
(Si) GeSn semiconductors are finally coming of age after a long gestation period. The
demonstration of device-quality epi-layers and quantum-engineered heterostructures has …

Strain engineered electrically pumped SiGeSn microring lasers on Si

B Marzban, L Seidel, T Liu, K Wu, V Kiyek… - Acs …, 2022 - ACS Publications
SiGeSn holds great promise for enabling fully group-IV integrated photonics operating at
wavelengths extending in the mid-infrared range. Here, we demonstrate an electrically …

Integrated lasers on silicon at communication wavelength: a progress review

N Li, G Chen, DKT Ng, LW Lim, J Xue… - Advanced Optical …, 2022 - Wiley Online Library
With the emerging trend of big data and internet of things, silicon (Si) photonics technology
has been developed and applied for high‐bandwidth data transmission. Contributed by the …

High-bandwidth extended-SWIR GeSn photodetectors on silicon achieving ultrafast broadband spectroscopic response

MRM Atalla, S Assali, S Koelling, A Attiaoui… - Acs …, 2022 - ACS Publications
The availability of high-frequency pulsed emitters in the 2–2.5 μm wavelength range paved
the way for a wealth of new applications in ultrafast spectroscopy, free-space and fiber …

Room temperature lasing in GeSn microdisks enabled by strain engineering

D Buca, A Bjelajac, D Spirito… - Advanced Optical …, 2022 - Wiley Online Library
The success of GeSn alloys as active material for infrared lasers could pave the way toward
a monolithic technology that can be manufactured within mainstream silicon photonics …

CMOS-compatible bias-tunable dual-band detector based on GeSn/Ge/Si coupled photodiodes

E Talamas Simola, V Kiyek, A Ballabio… - ACS …, 2021 - ACS Publications
Infrared (IR) multispectral detection is attracting increasing interest with the rising demand
for high spectral sensitivity, room temperature operation, CMOS-compatible devices. Here …

Mid-infrared Imaging Using Strain-Relaxed Ge1–xSnx Alloys Grown on 20 nm Ge Nanowires

L Luo, MRM Atalla, S Assali, S Koelling, G Daligou… - Nano Letters, 2024 - ACS Publications
Germanium–tin (Ge1–x Sn x) semiconductors are a front-runner platform for compact mid-
infrared devices due to their tunable narrow bandgap and compatibility with silicon …