Wireless communication under harsh environment using ultraviolet radiation remains a vital
field of research. We have reported the novel GaN pyramids of Djoser ultraviolet …

The quest for solar-blind photodetectors with outstanding optoelectronic properties and
weak signals detection capability is essential for their applications in the field of imaging …

In this work, we investigated the temperature-dependent photodetection behavior of a high-
performance AlGaN/GaN-based ultraviolet phototransistor (UVPT) operating under 265 nm …

Self-powered ultraviolet (UV) photodetectors play an important role in environmental
monitoring, aerospace and other fields because of the advantage of effective light response …

Realizing energy-efficient devices with sustainable and independent operation is a large
challenge for next-generation photodetection systems in various environments. In this study …

This study presents an AlGaN/GaN ultraviolet (UV) photodetector proven to be highly
effective when working under an ultra-low bias voltage. The proposed photodetector is …

AlN thin-film vacuum ultraviolet (VUV) photodetector was prepared by molecular beam
epitaxy (MBE) device on-Al2O3 substrate. By a complete surface nitridation of sapphire …

Large-scale hexagonal boron nitride (h-BN) single crystals are highly desirable not only as
the substrate or dielectric for van der Waals heterostructures, but also the promising …

In this work, a high-performance metal–semiconductor–metal solar-blind ultraviolet
photodetector (UV PD) based on AlGaN heterostructure (AlGaNH) is fabricated. By utilizing …

A high-performance AlGaN/GaN-based ultraviolet photodetector with a field-enhanced
mechanism for photocurrent collection is designed and fabricated in this work. In addition to …