An enhancement-mode GaN p-FET with improved breakdown voltage
In this letter, an enhancement-mode (E-mode) GaN p-channel field-effect transistors (p-
FETs) with current density of− 5.6 mA/mm and ratio of 10 6 was demonstrated on a p …
FETs) with current density of− 5.6 mA/mm and ratio of 10 6 was demonstrated on a p …
Tungsten-Gated GaN/AlGaN p-FET With Imax > 120 mA/mm on GaN-on-Si
This letter demonstrates Tungsten (W)-gated-channel GaN/AlGaN heterostructure field effect
transistors on a GaN-on-Si wafer grown by metal organic chemical vapor deposition …
transistors on a GaN-on-Si wafer grown by metal organic chemical vapor deposition …
High-Performance Enhancement-Mode p-Channel GaN MISFETs With Steep Subthreshold Swing
We report an enhancement-mode (E-mode)-channel GaN heterojunction field-effect
transistor with a metal-insulator-semiconductor gate structure. A 60 mV/dec subthreshold …
transistor with a metal-insulator-semiconductor gate structure. A 60 mV/dec subthreshold …
Interface state analysis of Schottky-gated p-AlGaN/u-GaN/AlGaN p-FET with negligible hysteresis at high temperatures
H Su, T Zhang, S Xu, H Tao, B Yun, J Zhang… - Applied Physics …, 2023 - pubs.aip.org
In this Letter, we demonstrate the Schottky gated p-AlGaN/u-GaN/AlGaN p-channel field-
effect transistors (p-FETs) with an extremely low interface state density of 2.5× 10 11 cm− 2 …
effect transistors (p-FETs) with an extremely low interface state density of 2.5× 10 11 cm− 2 …
Low-resistance Ni/Ag contacts on GaN-based p-channel heterojunction field-effect transistor
Y Zhang, Z Sun, W Wang, Y Liang… - … on Electron Devices, 2022 - ieeexplore.ieee.org
In this work, we have demonstrated the Ni/Ag contacts on p-channel heterostructure field-
effect transistors (p-HFETs) based on the p-GaN/AlGaN/GaN/Si platform. Using an optimal …
effect transistors (p-HFETs) based on the p-GaN/AlGaN/GaN/Si platform. Using an optimal …
Gate Leakage and Reliability of GaN-Channel FET With SiNₓ/GaON Staggered Gate Stack
-channel GaN field-effect transistors (FETs) with a SiNx/GaON gate stack have been
demonstrated with enhanced stability within a wide range of voltage bias and temperature …
demonstrated with enhanced stability within a wide range of voltage bias and temperature …
Depletion-and enhancement-mode p-channel MISHFET based on GaN/AlGaN single heterostructures on sapphire substrates
C Beckmann, Z Yang, J Wieben… - IEEE Journal of the …, 2023 - ieeexplore.ieee.org
We report on p-channel metal-insulator-semiconductor heterostructure field-effect transistors
(MISHFET) based on p-GaN/uid-GaN/Al textsubscript 0.29 Ga textsubscript 0.71 N single …
(MISHFET) based on p-GaN/uid-GaN/Al textsubscript 0.29 Ga textsubscript 0.71 N single …
[HTML][HTML] Plasma Treatment Technologies for GaN Electronics
Nowadays, the third-generation semiconductor led by GaN has brought great changes to the
semiconductor industry. Utilizing its characteristics of a wide bandgap, high breakdown …
semiconductor industry. Utilizing its characteristics of a wide bandgap, high breakdown …
Normally-Off p-Channel AlGaN/GaN/AlGaN MESFET with High Breakdown Voltage and Ultra-Low Interface State Density
H Su, T Zhang, S Xu, H Tao, J Zhang… - IEEE Electron Device …, 2023 - ieeexplore.ieee.org
In this work, a novel normally-off p-channel AlGaN/GaN/AlGaN Metal-Semiconductor field
effect transistor (MESFET) with threshold voltage () of− 0.7 V is demonstrated. The state-of …
effect transistor (MESFET) with threshold voltage () of− 0.7 V is demonstrated. The state-of …
Modulating microstructure and thermal properties of diamond/SiNx/GaN multilayer structure by diamond growth temperature
G Ma, Y Wang, R **a, B Meng, S Yuan, B Zhou… - Diamond and Related …, 2024 - Elsevier
Numerous growth conditions affect thermal properties in diamond/SiN x/GaN multilayer
structures, where diamond growth temperature is an important parameter and has not been …
structures, where diamond growth temperature is an important parameter and has not been …