The present invention is directed to display technologies. More specifically, various
embodiments of the present invention provide projection display systems where one or more …

US8847249B2 - Solid-state optical device having enhanced indium content in active regions -
Google Patents US8847249B2 - Solid-state optical device having enhanced indium content in …

7.923, 741 B1 4, 2011 Zhai et all-4- 2009, 0081857 A1 3f2009 Hanser et al. 7,939,354 B2
5/2011 Kyono et al. 7968.864 B2 6, 2011 Akita et al. 2009/0081867 A1 3, 2009 Taguchi et …

7,009,199 B2 3/2006 Hall 2008/00879 19 A1 4/2008 Tysoe et al. 2.933, 858 B2 4.2996 Chai
et al. 2008/00928.12 A1 4/2008 McDiarmid et al. 7053, 413 B2 5 2006 PEvelyn et al …

An optical device includes a gallium nitride substrate member having an m-plane nonpolar
crystalline surface region characterized by an orientation of about− 2 degrees to about 2 …

US9543738B2 - Low voltage laser diodes on {20-21} gallium and nitrogen containing
substrates - Google Patents US9543738B2 - Low voltage laser diodes on {20-21} gallium and …

A method for large-scale manufacturing of gallium nitride boules. Large-area single crystal
seed plates are suspended in a rack, placed in a large diameter autoclave or internally …

US PATENT DOCUMENTS 4,341,592 A 7, 1982 Shortes et al. 4,860,687 A 8/1989 Frilink
4,911,102 A 3, 1990 Manabe et al. 5,334.277 A 8, 1994 Nakamura 5,366,953. A 11/1994 …

A gettered polycrystalline group III metal nitride is formed by heating a group III metal with an
added getter in a nitrogen-containing gas. Most of the residual oxygen in the gettered …

A method for rapid growth of gallium and nitrogen containing material is described. The
method includes providing a bulk gallium and nitrogen containing substrate. A first epitaxial …