The electronic properties of bilayer graphene

E McCann, M Koshino - Reports on Progress in physics, 2013 - iopscience.iop.org
We review the electronic properties of bilayer graphene, beginning with a description of the
tight-binding model of bilayer graphene and the derivation of the effective Hamiltonian …

Experimental review of graphene

DR Cooper, B D'Anjou, N Ghattamaneni… - International …, 2012 - Wiley Online Library
This review examines the properties of graphene from an experimental perspective. The
intent is to review the most important experimental results at a level of detail appropriate for …

Properties of graphene: a theoretical perspective

DSL Abergel, V Apalkov, J Berashevich… - Advances in …, 2010 - Taylor & Francis
The electronic properties of graphene, a two-dimensional crystal of carbon atoms, are
exceptionally novel. For instance, the low-energy quasiparticles in graphene behave as …

Determination of the gate-tunable band gap and tight-binding parameters in bilayer graphene using infrared spectroscopy

AB Kuzmenko, I Crassee, D Van Der Marel… - Physical Review B …, 2009 - APS
We present a compelling evidence for the opening of a bandgap in exfoliated bottom-gated
bilayer graphene by fitting the gate-voltage-modulated infrared reflectivity spectra in a large …

Graphene field-effect transistors

D Reddy, LF Register, GD Carpenter… - Journal of Physics D …, 2011 - iopscience.iop.org
Owing in part to scaling challenges for metal oxide semiconductor field-effect transistors
(MOSFETs) and complementary metal oxide semiconductor (CMOS) logic, the …

Graphene synthesis, characterization and its applications in nanophotonics, nanoelectronics, and nanosensing

F Akbar, M Kolahdouz, S Larimian, B Radfar… - Journal of Materials …, 2015 - Springer
In the last decade, as semiconductor industry was approaching the end of the exponential
Moore's roadmap for device downscaling, the necessity of finding new candidate materials …

Multiscale modeling for graphene-based nanoscale transistors

G Fiori, G Iannaccone - Proceedings of the IEEE, 2013 - ieeexplore.ieee.org
The quest for develo** graphene-based nanoelectronics puts new requirements on the
science and technology of device modeling. It also heightens the role of device modeling in …

Lateral graphene–hBCN heterostructures as a platform for fully two-dimensional transistors

G Fiori, A Betti, S Bruzzone, G Iannaccone - Acs Nano, 2012 - ACS Publications
We propose that lateral heterostructures of single-atomic-layer graphene and hexagonal
boron–carbon-nitrogen (hBCN) domains, can represent a powerful platform for the …

Ultralow-voltage bilayer graphene tunnel FET

G Fiori, G Iannaccone - IEEE Electron Device Letters, 2009 - ieeexplore.ieee.org
In this letter, we propose the bilayer graphene tunnel field-effect transistor (TFET) as a
device suitable for fabrication and circuit integration with present-day technology. It provides …

Applications of graphene: an overview

EL Wolf - 2014 - Springer
Graphene, the leading example of a two-dimensional crystalline material, is exceptionally
conductive of electricity and heat even at 1 atom thickness, taken as 0.34 nm. This short …