GaN integrated circuit power amplifiers: Developments and prospects
R Nikandish - IEEE Journal of Microwaves, 2022 - ieeexplore.ieee.org
GaN integrated circuit technologies have dramatically progressed over the recent years. The
prominent feature of GaN high-electron mobility transistors (HEMTs), unparalleled output …
prominent feature of GaN high-electron mobility transistors (HEMTs), unparalleled output …
Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trap**, and Reliability
Application of gallium nitride high-electron-mobility transistors (GaN HEMTs) to millimeter-
wave power amplifiers requires gate length scaling below 150 nm: in order to control short …
wave power amplifiers requires gate length scaling below 150 nm: in order to control short …
A Broadband 110–170-GHz Stagger-Tuned Power Amplifier With 13.5-dBm Psat in 130-nm SiGe
This letter presents a fully integrated three-stage single-ended D-band power amplifier (PA)
designed in 0.13-μm silicon-germanium (SiGe) BiCMOS technology. Several bandwidth …
designed in 0.13-μm silicon-germanium (SiGe) BiCMOS technology. Several bandwidth …
A 190-210GHz Power Amplifier with 17.7-18.5 dBm Output Power and 6.9-8.5% PAE
We report a high-efficiency G-band power amplifier in 250nm InP HBT technology. The
amplifier has four capacitively linearized common base stages. Four power cells are …
amplifier has four capacitively linearized common base stages. Four power cells are …
A 75–305-GHz Power Amplifier MMIC With 10–14.9-dBm Pout in a 35-nm InGaAs mHEMT Technology
The demonstration of a 75-305-GHz power amplifier (PA) monolithic microwave integrated
circuit (MMIC) is presented in this letter. The PA is based on an eight-cell traveling-wave unit …
circuit (MMIC) is presented in this letter. The PA is based on an eight-cell traveling-wave unit …
[HTML][HTML] Gigahertz and terahertz transistors for 5G, 6G, and beyond mobile communication systems
Mankind is currently living in the era of mobile communication. Mobile communication
encompasses almost all areas of our daily life and is heavily used in most sectors of …
encompasses almost all areas of our daily life and is heavily used in most sectors of …
A D-Band Power Amplifier with 15 dBm Psat in 0.13 µm SiGe BiCMOS Technology
This paper presents a two-stage D-band power amplifier (PA) realized in 0.13 μm silicon-
germanium (SiGe) BiCMOS technology. The amplifier employs the cascode topology at both …
germanium (SiGe) BiCMOS technology. The amplifier employs the cascode topology at both …
A 220-GHz 110-mW Solid-State Power Combining Amplifier Based on Novel E-Plane Waveguide Magic-T
Y Ma, J Cao, M Zhan - Journal of Infrared, Millimeter, and Terahertz Waves, 2023 - Springer
This paper designs a novel E-plane waveguide magic-T in 220 GHz and develops a high-
power solid-state power amplifier (SSPA) operating at 210–230 GHz in combination with …
power solid-state power amplifier (SSPA) operating at 210–230 GHz in combination with …
Emerging GaN Technologies for Next-Generation Millimeter-Wave Applications
Advanced millimeter-wave (mm-wave) transceiver systems, including future mm-wave 5G
and 6G mobile networks, are of great interest to support high-data-rate communications (eg …
and 6G mobile networks, are of great interest to support high-data-rate communications (eg …
A New GaN HEMT Small-Signal Model Considering Source via Effects for 5G Millimeter-Wave Power Amplifier Design
J Kim - Applied Sciences, 2021 - mdpi.com
Featured Application 5G millimeter-wave GaN HEMT power amplifier design. Abstract A new
gallium nitride (GaN) high electron mobile transistor (HEMT) small-signal model is proposed …
gallium nitride (GaN) high electron mobile transistor (HEMT) small-signal model is proposed …