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Managing memory faults
BACKGROUND Current and future off-the-shelf computing memory tech-5 nologies are
Subject to memory cell failures that can prevent memory cells from reliably storing data. The …
Subject to memory cell failures that can prevent memory cells from reliably storing data. The …
Memory device with a dual Y-multiplexer structure for performing two simultaneous operations on the same row of a memory bank
N Berger, B Louie, M El-Baraji, L Crudele… - US Patent …, 2019 - Google Patents
(57) ABSTRACT A memory device for storing data is disclosed. The memory device
comprises a memory bank comprising a memory array of addressable memory cells and a …
comprises a memory bank comprising a memory array of addressable memory cells and a …
Smart cache design to prevent overflow for a memory device with a dynamic redundancy register
N Berger, B Louie, M El-Baraji, L Crudele… - US Patent …, 2019 - Google Patents
(57) ABSTRACT A memory device for storing data is disclosed. The memory device
comprises a memory bank comprising a plurality of addressable memory cells configured in …
comprises a memory bank comprising a plurality of addressable memory cells configured in …
Memory instruction pipeline with a pre-read stage for a write operation for reducing power consumption in a memory device that uses dynamic redundancy registers
N Berger, B Louie, M El-Baraji, L Crudele… - US Patent …, 2019 - Google Patents
ABSTRACT A memory pipeline for performing a write operation in a memory device is
disclosed. The memory pipeline com prises an input register operable to receive a first data …
disclosed. The memory pipeline com prises an input register operable to receive a first data …
Memory instruction pipeline with an additional write stage in a memory device that uses dynamic redundancy registers
N Berger, B Louie, M El-Baraji, L Crudele… - US Patent …, 2019 - Google Patents
US10192601B2 - Memory instruction pipeline with an additional write stage in a memory device
that uses dynamic redundancy registers - Google Patents US10192601B2 - Memory instruction …
that uses dynamic redundancy registers - Google Patents US10192601B2 - Memory instruction …
Method of flushing the contents of a dynamic redundancy register to a secure storage area during a power down in a memory device
N Berger, B Louie, M El-Baraji, L Crudele… - US Patent …, 2019 - Google Patents
US10437723B2 - Method of flushing the contents of a dynamic redundancy register to a secure
storage area during a power down in a memory device - Google Patents US10437723B2 …
storage area during a power down in a memory device - Google Patents US10437723B2 …
Memory device with a plurality of memory banks where each memory bank is associated with a corresponding memory instruction pipeline and a dynamic redundancy …
N Berger, B Louie, M El-Baraji, L Crudele… - US Patent …, 2020 - Google Patents
(57) ABSTRACT A memory device for storing data is disclosed. The memory device
comprises a plurality of memory banks, wherein each memory bank comprises a plurality of …
comprises a plurality of memory banks, wherein each memory bank comprises a plurality of …
Spin transfer torque MRAM device with error buffer
BS Louie, N Berger - US Patent 10,115,446, 2018 - Google Patents
US10115446B1 - Spin transfer torque MRAM device with error buffer - Google Patents
US10115446B1 - Spin transfer torque MRAM device with error buffer - Google Patents Spin …
US10115446B1 - Spin transfer torque MRAM device with error buffer - Google Patents Spin …
Determining and storing bit error rate relationships in spin transfer torque magnetoresistive random-access memory (STT-MRAM)
(*) Notice: Subject to any disclaimer, the term of this Ipek et al;" Dynamically replicated
memory: building reliable patent is extended or adjusted under 35 systems from nanoscale …
memory: building reliable patent is extended or adjusted under 35 systems from nanoscale …
Dynamic temperature adjustments in spin transfer torque magnetoresistive random-access memory (STT-MRAM)
Systems and methods to manage memory on a spin transfer torque magnetoresistive
random-access memory (STT MRAM) are provided. A particular method of managing …
random-access memory (STT MRAM) are provided. A particular method of managing …