Manufacturing metrology for c-Si module reliability and durability Part II: Cell manufacturing

KO Davis, MP Rodgers, G Scardera, RP Brooker… - … and Sustainable Energy …, 2016 - Elsevier
This article is the second article in a three-part series dedicated to reviewing each process
step in crystalline silicon (c-Si) photovoltaic (PV) module manufacturing process: feedstock …

Advanced manufacturing concepts for crystalline silicon solar cells

JF Nijs, J Szlufcik, J Poortmans… - … on Electron Devices, 1999 - ieeexplore.ieee.org
An overview is given concerning current industrial technologies, near future improvements
and medium term developments in the field of industrially implementable crystalline silicon …

Boron Spin-On Do** for Poly-Si/SiOx Passivating Contacts

Z Ding, TN Truong, HT Nguyen, D Yan… - ACS Applied Energy …, 2021 - ACS Publications
Herein, we fabricate and characterize p-type passivating contacts based on industrial
intrinsic polycrystalline silicon (poly-Si)/thermal-SiO x/n-type crystalline Si (c-Si) substrates …

Phosphorus diffusion from a spin-on doped glass (SOD) source during rapid thermal annealing

D Mathiot, A Lachiq, A Slaoui, S Noël, JC Muller… - Materials science in …, 1998 - Elsevier
Limiting thermal exposure time using rapid thermal processing (RTP) has emerged as a
promising simplified process for microelectronics applications and for manufacturing of …

Enhanced silicon solar cell performance by rapid thermal firing of screen-printed metals

JW Jeong, A Rohatgi, V Yelundur… - IEEE transactions on …, 2001 - ieeexplore.ieee.org
Rapid thermal processing (RTP) of screen-printed (SP) Al on the back and silver (Ag) grid on
the front produced significant improvement in back surface field (BSF) of n/sup+ …

Spin-on-do** for output power improvement of silicon nanowire array based thermoelectric power generators

B Xu, K Fobelets - Journal of Applied Physics, 2014 - pubs.aip.org
The output power of a silicon nanowire array (NWA)-bulk thermoelectric power generator
(TEG) with Cu contacts is improved by spin-on-do** (SOD). The Si NWAs used in this …

A comprehensive study on the physicochemical and electrical properties of Si doped with the molecular do** method

RA Puglisi, S Caccamo, L D'Urso… - … status solidi (a), 2015 - Wiley Online Library
Semiconductor do** through solution‐based self‐assembling provides a simple, scalable,
and cost‐effective alternative to standard methods and additionally allows conformality on …

Split Gate Bulk-Planar Junctionless FET based Biosensor for Label-Free Detection of Biomolecules

D Singh, GC Patil, BD Choudhury - IEEE Sensors Journal, 2024 - ieeexplore.ieee.org
In this article, for the first time, we demonstrate the fabrication of low-cost split gate bulk
planar junctionless field-effect transistor (SG-BPJLFET) for biosensing applications. In the …

Germanium pn junctions by laser do** for photonics/microelectronic devices

Y Bao, K Sun, N Dhar, MC Gupta - Ieee Photonics Technology …, 2014 - ieeexplore.ieee.org
A method of forming germanium pn junction by laser do** is demonstrated. Low bulk and
surface leakage current density of 5.4 mA/cm 2 and 2.0 μA/cm, respectively, were obtained …

Rapid thermal processing of high-efficiency silicon solar cells with controlled in-situ annealing

P Doshi, A Rohatgi, M Ropp, Z Chen, D Ruby… - Solar Energy Materials …, 1996 - Elsevier
Silicon solar cell efficiencies of 17.1%, 16.4%, 14.8%, and 14.9% have been achieved on
FZ, Cz, multicrystalline (mc-Si), and dendritic web (DW) silicon, respectively, using …