Ga 2 O 3 polymorphs: tailoring the epitaxial growth conditions
Gallium oxide is a wide bandgap n-type semiconductor highly interesting for optoelectronic
applications (eg, power electronics and solar blind UV photodetectors). Besides its most …
applications (eg, power electronics and solar blind UV photodetectors). Besides its most …
A strategic review on gallium oxide based power electronics: Recent progress and future prospects
Silicon based power devices have limited capabilities in terms of voltage handling and
switching speeds, leading to rampant research in the field of next generation wide bandgap …
switching speeds, leading to rampant research in the field of next generation wide bandgap …
[HTML][HTML] β-Gallium oxide power electronics
[HTML][HTML] Optical signatures of deep level defects in Ga2O3
We used depth-resolved cathodoluminescence spectroscopy and surface photovoltage
spectroscopy to measure the effects of near-surface plasma processing and neutron …
spectroscopy to measure the effects of near-surface plasma processing and neutron …
Systematic investigation of the growth kinetics of β-Ga2O3 epilayer by plasma enhanced chemical vapor deposition
C Wu, DY Guo, LY Zhang, PG Li, FB Zhang… - Applied Physics …, 2020 - pubs.aip.org
β-Ga 2 O 3 has attracted much attention due to its ultrawide-bandgap (∼ 4.9 eV) with a high
breakdown field (8 MV/cm) and good thermal/chemical stability. In order for β-Ga 2 O 3 to be …
breakdown field (8 MV/cm) and good thermal/chemical stability. In order for β-Ga 2 O 3 to be …
High-Speed and Ultrasensitive Solar-Blind Ultraviolet Photodetectors Based on In Situ Grown β-Ga2O3 Single-Crystal Films
T Chen, X Zhang, L Zhang, C Zeng, S Li… - … Applied Materials & …, 2024 - ACS Publications
Deep-level defects in β-Ga2O3 that worsen the response speed and dark current (I d) of
photodetectors (PDs) have been a long-standing issue for its application. Herein, an in situ …
photodetectors (PDs) have been a long-standing issue for its application. Herein, an in situ …