The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has
the potential to deliver high power and high frequency with performances surpassing …

For emerging wearable chip-based electronics, power loss is a critical concern for micro-
nano electronic circuits due to high subthreshold swing (SS) value of 60 mV dec− 1 for the …

Gate controllability is a key factor that determines the performance of GaN high electron
mobility transistors (HEMTs). However, at the traditional metal‐GaN interface, direct …

We presented an explicit empirical model of the thermal resistance of AlGaN/GaN high-
electron-mobility transistors on three distinct substrates, including sapphire, SiC, and Si. This …

We present the mean time to failure (MTTF) of on-wafer AlGaN/GaN HEMTs under two
distinct electric field stress conditions. The channel temperature (Tch) of the devices exhibits …

This paper presents a novel approach to the efficient extraction of parasitic resistances in
high electron mobility transistors (HEMTs). The study reveals that the gate resistance value …

In this study, we present a detailed analysis of trap** characteristics at the AlxGa1−
xN/GaN interface of AlxGa1− xN/GaN high-electron-mobility transistors (HEMTs) with …

This work proposes a novel AlGaN/GaN transient voltage suppression (TVS) diode (B-TVS-
D) with bidirectional clamp capability, which consists of a small-size AlGaN/GaN monolithic …

The influence of external strain on the gate leakage current of AlGaN/GaN high-electron-
mobility transistors was studied. The magnitude of the leakage current increased by 39 …

High capacitance and low leakage current of capacitors are crucial for scaling down
dynamic random access memory (DRAM). In this study, high-work-function (WF) indium …