Graphene nanoribbons for electronic devices
Z Geng, B Hähnlein, R Granzner, M Auge… - Annalen der …, 2017 - Wiley Online Library
Graphene nanoribbons show unique properties and have attracted a lot of attention in the
recent past. Intensive theoretical and experimental studies on such nanostructures at both …
recent past. Intensive theoretical and experimental studies on such nanostructures at both …
Phosphorus-do**-induced rectifying behavior in armchair graphene nanoribbons devices
Based on nonequilibrium Green's functions in combination with density-functions theory, the
transport properties of armchair graphene nanoribbon (AGNR) devices were investigated, in …
transport properties of armchair graphene nanoribbon (AGNR) devices were investigated, in …
Epitaxial graphene three-terminal junctions
R Göckeritz, J Pezoldt, F Schwierz - Applied Physics Letters, 2011 - pubs.aip.org
We report on the fabrication and characterization of graphene three-terminal junctions with
nanometer dimensions. The devices have been realized in epitaxial graphene on semi …
nanometer dimensions. The devices have been realized in epitaxial graphene on semi …
NAND gate design for ballistic deflection transistors
This paper presents a nand gate designed using ballistic deflection transistors (BDTs).
Room temperature BDT measurements are captured in an empirical device model to …
Room temperature BDT measurements are captured in an empirical device model to …
Terahertz electrical response of nanoscale three-branch junctions
Ultrafast time-domain electro-optical characterization of the ballistic three-branch junctions
(TBJs) has been performed to investigate their electrical response at terahertz (THz) …
(TBJs) has been performed to investigate their electrical response at terahertz (THz) …
Electrical gating and rectification in graphene three-terminal junctions
B Händel, B Hähnlein, R Göckeritz, F Schwierz… - Applied surface …, 2014 - Elsevier
Graphene was grown on semiinsulating silicon carbide at 1800° C and atmospheric argon
pressure. The all carbon T-and Y-shape three terminal junction devices were fabricated …
pressure. The all carbon T-and Y-shape three terminal junction devices were fabricated …
Three-terminal junctions operating as mixers, frequency doublers and detectors: a broad-band frequency numerical and experimental study at room temperature
The frequency response of nanometric T-and Y-shaped three-terminal junctions (TTJs) is
investigated experimentally and numerically. In virtue of the parabolic down-bending of the …
investigated experimentally and numerically. In virtue of the parabolic down-bending of the …
Nonlinear electrical properties of Si three-terminal junction devices
This letter reports on the realization and characterization of silicon three-terminal junction
devices made in a silicon-on-insulator wafer. Room temperature electrical measurements …
devices made in a silicon-on-insulator wafer. Room temperature electrical measurements …
Nonlinear electron properties of an InGaAs/InAlAs-based ballistic deflection transistor: Room temperature DC experiments and numerical simulations
We present a detailed experimental and numerical study of a novel device so-called ballistic
deflection transistor (BDT). Based on InGaAs–InAlAs heterostructure on InP substrate, BDT …
deflection transistor (BDT). Based on InGaAs–InAlAs heterostructure on InP substrate, BDT …
Power gain up to gigahertz frequencies in three-terminal nanojunctions at room temperature
D Spanheimer, CR Müller, J Heinrich, S Höfling… - Applied Physics …, 2009 - pubs.aip.org
Direct current and alternating current characteristics of three-terminal nanojunctions (TTJs)
are studied at room temperature. The TTJs are based on a modulation-doped Ga As∕ Al Ga …
are studied at room temperature. The TTJs are based on a modulation-doped Ga As∕ Al Ga …