Toward Excellence in Photocathode Engineering for Photoelectrochemical CO2 Reduction: Design Rationales and Current Progress

LK Putri, BJ Ng, WJ Ong, SP Chai… - Advanced Energy …, 2022 - Wiley Online Library
Photoelectrochemical CO2 reduction reaction (PEC CO2RR) is a promising technology
which offers the possibility of a carbon‐neutral solar fuel production via artificial …

Light trap** in thin silicon solar cells: A review on fundamentals and technologies

R Saive - Progress in Photovoltaics: Research and …, 2021 - Wiley Online Library
Thin, flexible, and efficient silicon solar cells would revolutionize the photovoltaic market and
open up new opportunities for PV integration. However, as an indirect semiconductor, silicon …

[HTML][HTML] Uncertainty analysis for the coefficient of band-to-band absorption of crystalline silicon

C Schinke, P Christian Peest, J Schmidt, R Brendel… - Aip Advances, 2015 - pubs.aip.org
We analyze the uncertainty of the coefficient of band-to-band absorption of crystalline
silicon. For this purpose, we determine the absorption coefficient at room temperature (295 …

A review of some charge transport properties of silicon

C Jacoboni, C Canali, G Ottaviani, AA Quaranta - Solid-State Electronics, 1977 - Elsevier
This paper reviews the present knowledge of charge transport properties in silicon, with
special emphasis on their application in the design of solid-state devices. Therefore, most …

[Књига][B] Electronic structure and optical properties of semiconductors

ML Cohen, JR Chelikowsky - 2012 - books.google.com
We began planning and writing this book in the late 1970s at the suggestion of Manuel
Cardona and Helmut Lotsch. We also received considerable en couragement and …

The optical properties of luminescence centres in silicon

G Davies - Physics reports, 1989 - Elsevier
Over one hundred independent photoluminescence transitions are now known in crystalline
silicon. This paper begins by outlining those properties of silicon which are relevant to …

Tight-binding modelling of materials

CM Goringe, DR Bowler… - Reports on Progress in …, 1997 - iopscience.iop.org
The tight-binding method of modelling materials lies between the very accurate, very
expensive, ab initio methods and the fast but limited empirical methods. When compared …

[Књига][B] Basic semiconductor physics

C Hamaguchi, C Hamaguchi - 2010 - Springer
The purpose of this book was to provide a detailed understanding of the basic
semiconductor physics such as properties of electronic, optical, transport, and quantum …

Electronic-band parameters in strained alloys on substrates

MM Rieger, P Vogl - Physical Review B, 1993 - APS
A systematic theoretical study of the electronic properties of pseudomorphic (100)-strained
Si 1− x Ge x alloys grown on unstrained Si 1− y Ge y substrates is presented. Based on …

Electronic structure of the Si (111) 2× 1 surface by scanning-tunneling microscopy

JA Stroscio, RM Feenstra, AP Fein - Physical review letters, 1986 - APS
The tunneling current is measured as a function of voltage, lateral position, and vertical
separation between a tungsten probe tip and a Si (111) 2× 1 surface. A rich spectrum is …