A review of selected topics in physics based modeling for tunnel field-effect transistors
The research field on tunnel-FETs (TFETs) has been rapidly develo** in the last ten years,
driven by the quest for a new electronic switch operating at a supply voltage well below 1 V …
driven by the quest for a new electronic switch operating at a supply voltage well below 1 V …
Influencing factors for vulcanization induction period of accelerator/natural rubber composites: Molecular simulation and experimental study
M Wang, J Zhu, S Zhang, G You, S Wu - Polymer testing, 2019 - Elsevier
Sulfonamide accelerators are one of the most widely used additives in rubber composites
since they can significantly improve the rate of vulcanization process. However, usually the …
since they can significantly improve the rate of vulcanization process. However, usually the …
Impact of asymmetric configurations on the heterogate germanium electron–hole bilayer tunnel FET including quantum confinement
We investigate the effect of asymmetric configurations on the heterogate germanium
electron-hole bilayer tunnel FET (TFET) and assess the improvement that they provide in …
electron-hole bilayer tunnel FET (TFET) and assess the improvement that they provide in …
The electron-hole bilayer TFET: Dimensionality effects and optimization
An extensive parameter analysis is performed on the electron-hole bilayer tunnel field-effect
transistor (EHBTFET) using a 1-D effective mass Schrödinger-Poisson solver with …
transistor (EHBTFET) using a 1-D effective mass Schrödinger-Poisson solver with …
DC performance analysis of III–V/Si heterostructure double gate triple material PiN tunneling graphene nanoribbon FET circuits with quantum mechanical effects
In this article, the electrical behavior of laterally grown novel short-channel III–V/Si
heterostructure double gate triple material PiN tunneling graphene nanoribbon field effect …
heterostructure double gate triple material PiN tunneling graphene nanoribbon field effect …
A novel reconfigurable sub-0.25-V digital logic family using the electron-hole bilayer TFET
We propose and validate a novel design methodology for logic circuits that exploits the
conduction mechanism and the presence of two independently biased gates (“n-gate” and …
conduction mechanism and the presence of two independently biased gates (“n-gate” and …
Gate leakage tunneling impact on the InAs/GaSb heterojunction electron–Hole Bilayer tunneling field-effect transistor
Among the different types of bilayer tunneling field-effect transistors exploiting interband
tunneling phenomena with tunneling directions aligned with gate-induced electric fields, the …
tunneling phenomena with tunneling directions aligned with gate-induced electric fields, the …
Underlap counterdo** as an efficient means to suppress lateral leakage in the electron–hole bilayer tunnel FET
The electron–hole bilayer tunnel (EHBTFET) has been proposed as a density of states
(DOS) switch capable of achieving a subthreshold slope lower than 60mV/decade at room …
(DOS) switch capable of achieving a subthreshold slope lower than 60mV/decade at room …
Switching behavior constraint in the heterogate electron–hole bilayer tunnel FET: The combined interplay between quantum confinement effects and asymmetric …
Switching behavior in electron-hole bilayer tunnel FETs is known to be unaffected by the
subthreshold swing limitation of 60 mV/decade imposed by thermal injection, due to the …
subthreshold swing limitation of 60 mV/decade imposed by thermal injection, due to the …
Impact of device geometry of the fin electron-hole bilayer tunnel FET
We study the impact of quantum mechanical effects on the fin Electron-Hole Bilayer Tunnel
FET (EHBTFET) considering different geometries. Through quantum simulations based on …
FET (EHBTFET) considering different geometries. Through quantum simulations based on …