This Review highlights basic and transition metal conducting and semiconducting oxides.
We discuss their material and electronic properties with an emphasis on the crystal …

One of the fundamental properties of semiconductors is their ability to support highly tunable
electric currents in the presence of electric fields or carrier concentration gradients. These …

The present Tutorial provides a description of the growth of bulk β-Ga 2 O 3 single crystals
by the Czochralski method with a focus on the critical growth aspects. In particular, it details …

Carrier mobility is at the root of our understanding of electronic devices. We present a unified
methodology for the parameter-free calculations of phonon-limited drift and Hall carrier …

We investigate the structural, electronic, vibrational, power, and transport properties of the β
allotrope of Ga 2 O 3 from first principles. We find phonon frequencies and elastic constants …

Alloys between Ga 2 O 3 and Al 2 O 3 (AGO) present a rich material space exhibiting
numerous structural phases with unique optoelectronic properties that make them attractive …

We report on the silicon delta do** of metalorganic vapor-phase epitaxy grown β-Ga 2 O 3
thin films using silane as a precursor. The delta-doped β-Ga 2 O 3 epitaxial films are …

The temperature dependence of self-trapped exciton (STE) emission and the optical
absorption edge of monoclinic gallium oxide (β-Ga2O3) has been carefully studied …

In this study, we carried out a detailed investigation of the photoluminescence of Mn4+ in
Ga2O3–Al2O3 solid solutions as a function of the chemical composition, temperature, and …

As the core carrier of integrated circuits, packaging substrates usually respond in time to the
evolution of electronic products. Among which, ceramic substrate materials are desired to …