In two editions spanning more than a decade, The Electrical Engineering Handbook stands
as the definitive reference to the multidisciplinary field of electrical engineering. Our …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

The concept of below-threshold and above-threshold current injection efficiency of quantum
well (QW) lasers is clarified. The analysis presented here is applied to the current injection …

Metalorganic chemical vapor deposition-grown In 0.4 Ga 0.6 As 0.995 N 0.005 quantum well
(QW) lasers have been realized, at an emission wavelength of 1.295 μm, with threshold and …

We present an overview of our optical characterization work on dilute nitride quantum well
(QW) samples. A simple model for calculating interband transition energies is constructed …

We have investigated the electronic band structure and optical transparency conditions of In
x Ga 1− x As 1− y N y∕ Ga As quantum well (QW) using 10-band, 8-band and 6-band k∙ p …

Highly strained (/spl Delta/a/a/spl sim/2.5%) In/sub 0.4/Ga/sub 0.6/As and In/sub 0.4/Ga/sub
0.6/As/sub 0.995/N/sub 0.005/-quantum-well (QW) active lasers utilizing strain …

We present the characteristics of high-performance strain-compensated MOCVD-grown
1200-nm InGaAs and 1300-nm InGaAsN quantum-well (QW) lasers using AsH 3 and U …

Very low threshold-current-density InGaAsN quantum-well lasers with GaAsN barriers,
grown using metalorganic chemical vapor deposition, have been realized with a room …

Carrier leakage processes are shown experimentally as one of the factors contributing to the
temperature sensitivity of InGaAsN quantum well lasers. The utilization of the direct barriers …