Germicidal ultraviolet LEDs: A review of applications and semiconductor technologies
Ultraviolet light emitting diodes (UV LEDs) are one of the most promising technologies for
preventing future pandemics, improving health outcomes, and disinfecting water sources …
preventing future pandemics, improving health outcomes, and disinfecting water sources …
N-polar GaN: Epitaxy, properties, and device applications
Abstract In recent years, Gallium Nitride (GaN) has been established as a material of choice
for high power switching, high power RF and lighting applications. In c-direction, depending …
for high power switching, high power RF and lighting applications. In c-direction, depending …
Thermal transport mechanism of AlN/SiG/3C–SiC typical heterostructures
B Yang, J Wang, Z Yang, Z **n, N Zhang, H Zheng… - Materials Today …, 2023 - Elsevier
Understanding the heat transfer mechanism of typical structures in high-power chips is
essential for chip design with better engineered heat transfer performance. Here, the …
essential for chip design with better engineered heat transfer performance. Here, the …
Role of oxygen diffusion in the dislocation reduction of epitaxial AlN on sapphire during high-temperature annealing
Recovery of epitaxial AlN films on sapphire at high temperatures is now an established
process to produce pseudo-substrates with high crystalline perfection, which can be used to …
process to produce pseudo-substrates with high crystalline perfection, which can be used to …
[HTML][HTML] Heteroepitaxy of N-polar AlN on C-face 4H-SiC: Structural and optical properties
To date, it has remained challenging to achieve N-polar AlN, which is of great importance for
high power, high frequency, and high temperature electronics, acoustic resonators and …
high power, high frequency, and high temperature electronics, acoustic resonators and …
Unprecedented enhancement of piezoelectricity in wurtzite nitride semiconductors via thermal annealing
The incorporation of rare-earth elements in wurtzite nitride semiconductors, eg, scandium
alloyed aluminum nitride (ScAlN), promises dramatically enhanced piezoelectric responses …
alloyed aluminum nitride (ScAlN), promises dramatically enhanced piezoelectric responses …
Radiative Recombination and Carrier Injection Efficiencies in 265 nm Deep Ultraviolet Light‐Emitting Diodes Grown on AlN/Sapphire Templates with Different Defect …
The electro‐optical characteristics of deep ultraviolet light‐emitting diodes (DUV LEDs)
emitting at 265 nm and grown on AlN/sapphire templates with different threading dislocation …
emitting at 265 nm and grown on AlN/sapphire templates with different threading dislocation …
Unexpected Realization of N-Polar AlN Films on Si-Face 4H–SiC Substrates Using RF Sputtering and High-Temperature Annealing
R Zhang, Y Guo, T Cai, Z Liu, N Liu, J Yan… - Crystal Growth & …, 2023 - ACS Publications
In this study, we demonstrated AlN films with unexpected N-polarity on Si-face 4H–SiC
substrates using RF reactive magnetron sputtering and post high-temperature annealing …
substrates using RF reactive magnetron sputtering and post high-temperature annealing …
[PDF][PDF] Radiative recombination and carrier injection efficiencies in 265 nm deep UV LEDs grown on AlN/sapphire templates with different defect densities
AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) with emission wavelengths
shorter than 280 nm have multiple applications ranging from disinfection of surfaces,[1, 2, 3] …
shorter than 280 nm have multiple applications ranging from disinfection of surfaces,[1, 2, 3] …
In situ observations of the dissolution of an AlN film into liquid Al using a high-temperature microscope
M Adachi, K Fujiwara, R Sekiya, H Kobatake… - Materials Science in …, 2022 - Elsevier
This report describes the implementation of an original liquid-phase epitaxy (LPE) technique
using a Ga–Al solution. An N-polar AlN thin film prepared using a sapphire nitridation …
using a Ga–Al solution. An N-polar AlN thin film prepared using a sapphire nitridation …