Group III–V semiconductors are based on the elements of groups III and V of the periodic
table. The possibility to grow thin-films made of binary, ternary, and quaternary III–V alloys …

Abstract Second-order (χ (2)) optical nonlinearity is one of the most common mechanisms for
modulating and generating coherent light in photonic devices. Due to strong photon …

We perform comprehensive studies on the fundamental loss mechanisms in III-nitride
waveguides in the visible spectral region. Theoretical analysis shows that free carrier loss …

We demonstrate broadband, low loss optical waveguiding in single crystalline GaN grown
epitaxially on c-plane sapphire wafers through a buffered metal-organic chemical vapor …

Large cross-section GaN waveguides are proposed as a suitable architecture to achieve
integrated quantum photonic circuits. Directional couplers with this geometry have been …

III-nitrides provide a versatile platform for nonlinear photonics. In this work, we explore a new
promising configuration–composite waveguides containing GaN and AlN layers with …

We demonstrate low-loss GaN/AlGaN planar waveguides grown by molecular beam epitaxy
on sapphire substrates. By using a proper AlGaN cladding layer and reducing surface …

Photonic integrated circuits (PICs) based on gallium nitride (GaN) platforms have been
widely explored for various applications at C-band (1530? nm∼ 1565? nm) and visible light …

An InGaN laser diode with InGaN–GaN–InGaN delta barriers was designed and
investigated numerically. The laser power–current–voltage performance curves, carrier …

In this work, we demonstrate gallium nitride (GaN) waveguide resonators by sputtering
amorphous GaN films on the silicon-based substrate. With the aid of high-power impulse …