Vertical GaN MOSFET power devices
Gallium nitride (GaN) possesses remarkable characteristics such as a wide bandgap, high
critical electric field, robust antiradiation properties, and a high saturation velocity for high …
critical electric field, robust antiradiation properties, and a high saturation velocity for high …
Vertical GaN and Vertical Ga2O3 Power Transistors: Status and Challenges
Wide bandgap (WBG) semiconductors such as gallium nitride (GaN) and silicon carbide
(SiC) are rapidly making inroads into the power semiconductor markets dominated by the …
(SiC) are rapidly making inroads into the power semiconductor markets dominated by the …
702.3 A·cm⁻²/10.4 mΩ·cm² β-Ga₂O₃ U-Shape Trench Gate MOSFET With N-Ion Implantation
High-performance-Ga2O3 U-shaped trench-gate metal-oxide-semiconductor field-effect
transistor (UMOSFET) has been demonstrated. Nitrogen ions implantation was employed to …
transistor (UMOSFET) has been demonstrated. Nitrogen ions implantation was employed to …
Overview of wide/ultrawide bandgap power semiconductor devices for distributed energy resources
This article provides an overview of power semiconductor devices (PSDs) for the distributed
energy resource (DER) system. To begin with, an overview of electrically triggered silicon …
energy resource (DER) system. To begin with, an overview of electrically triggered silicon …
Experimental evaluation of medium-voltage cascode gallium nitride (GaN) devices for bidirectional DC-DC converters
SS Alharbi, M Matin - CES Transactions on Electrical Machines …, 2021 - ieeexplore.ieee.org
Wide bandgap (WBG) semiconductors, such as silicon carbide (SiC) and gallium nitride
(GaN), exhibit superior physical properties and demonstrate great potential for replacing …
(GaN), exhibit superior physical properties and demonstrate great potential for replacing …
Detection of defect levels in vicinity of Al2O3/p-type GaN interface using sub-bandgap-light-assisted capacitance–voltage method
M Akazawa, Y Tamamura, T Nukariya, K Kubo… - Journal of Applied …, 2022 - pubs.aip.org
Defect levels in the vicinity of the Al 2 O 3/p-type GaN interface were characterized using a
sub-bandgap-light-assisted capacitance–voltage (C–V) method. For metal–oxide …
sub-bandgap-light-assisted capacitance–voltage (C–V) method. For metal–oxide …
Simulation study of an ultralow switching loss p-GaN gate HEMT with dynamic charge storage mechanism
In this article, a dynamic charge storage mechanism is proposed for designing the p-GaN
gate dynamic charge storage high-electron-mobility transistor (DCS-HEMT) with ultralow …
gate dynamic charge storage high-electron-mobility transistor (DCS-HEMT) with ultralow …
Why do electron traps at EC–0.6 eV have inverse correlation with carbon concentrations in n-type GaN layers?
We found that the graphite elements in a metalorganic vapor phase epitaxy reactor are a
significant source of iron atoms, and lead to the formation of E3 electron traps at an energy …
significant source of iron atoms, and lead to the formation of E3 electron traps at an energy …
Suppression of positive bias instability by inserting polarized AlN interlayer at AlSiO/p-type GaN interface in metal–oxide–semiconductor field-effect transistor
H Iguchi, T Narita, K Ito, S Iwasaki, E Kano… - Applied Physics …, 2024 - pubs.aip.org
Bias instability is a critical issue for metal–oxide–semiconductor field-effect transistors
(MOSFETs). This study demonstrates suppression of the positive bias instability of the …
(MOSFETs). This study demonstrates suppression of the positive bias instability of the …
Gate-Bias-Induced Threshold Voltage Shifts in GaN FATFETs
Y Irokawa, K Mitsuishi, T Izumi, J Nishii… - ECS Journal of Solid …, 2023 - iopscience.iop.org
The threshold voltage (V TH) stability in GaN fat field-effect transistors (FATFETs) with a
large channel area of∼ 6.2× 10 4 μm 2 was studied using drain current vs gate voltage (ID …
large channel area of∼ 6.2× 10 4 μm 2 was studied using drain current vs gate voltage (ID …