Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors
J Yang, K Liu, X Chen, D Shen - Progress in Quantum Electronics, 2022 - Elsevier
Owing to their novel physical properties, semiconductors have penetrated almost every
corner of the contemporary industrial system. Nowadays, semiconductor materials and their …
corner of the contemporary industrial system. Nowadays, semiconductor materials and their …
Gallium oxide for gas sensor applications: A comprehensive review
Ga2O3 has emerged as a promising ultrawide bandgap semiconductor for numerous device
applications owing to its excellent material properties. In this paper, we present a …
applications owing to its excellent material properties. In this paper, we present a …
A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga2O3 for Device Applications
Ultrawide bandgap β-gallium oxide (β-Ga2O3) is emerging as a viable candidate for next-
generation high-power electronics, including Schottky barrier diodes (SBDs) and field-effect …
generation high-power electronics, including Schottky barrier diodes (SBDs) and field-effect …
Enhancement-mode β-Ga2O3 U-shaped gate trench vertical MOSFET realized by oxygen annealing
Vertical metal–oxide–semiconductor field effect transistor (MOSFET) is essential to the future
application of ultrawide bandgap β-Ga 2 O 3. In this work, we demonstrated an …
application of ultrawide bandgap β-Ga 2 O 3. In this work, we demonstrated an …
The excellent electrocatalytic HER activity and photogalvanic effect of WS2/Ga2O3 based on Density Functional Theory
Z Cui, H Wang, Y Shen, K Qin, P Yuan, E Li - International Journal of …, 2024 - Elsevier
This study is based on density functional theory, studied structure and electronic properties,
optical properties, electrocatalytic water splitting to produce H 2, and electrical properties of …
optical properties, electrocatalytic water splitting to produce H 2, and electrical properties of …
Regulation of oxygen vacancies in nitrogen-doped Ga 2 O 3 films for high-performance MSM solar-blind UV photodetectors
J Wang, X Ji, S Qi, Z Li, Z Yan, M Li, X Yan… - Journal of Materials …, 2023 - pubs.rsc.org
Gallium oxide (Ga2O3)-based solar-blind photodetectors (SBPDs) have shown promising
applications. However, the concentration of native oxygen vacancies (VO) impacts the …
applications. However, the concentration of native oxygen vacancies (VO) impacts the …
Characteristics of grafted monocrystalline Si/β-Ga2O3p–n heterojunction
Beta-phase gallium oxide (β-Ga 2 O 3) has exceptional electronic properties with vast
potential in power and radio frequency electronics. Despite the excellent demonstrations of …
potential in power and radio frequency electronics. Despite the excellent demonstrations of …
Indium do**-assisted monolayer Ga 2 O 3 exfoliation for performance-enhanced MOSFETs
P Li, L Dong, C Li, B Lu, C Yang, B Peng, W Wang… - Nanoscale, 2023 - pubs.rsc.org
Monolayer (ML) Ga2O3 with outstanding properties is promising for advanced nanodevice
applications; however, its high exfoliation energy makes obtaining it challenging. In this …
applications; however, its high exfoliation energy makes obtaining it challenging. In this …
Realizing high-performance β-Ga₂O₃ MOSFET by using variation of lateral do**: a TCAD study
High sensitivity Ga2O3 ultraviolet photodetector by one-step thermal oxidation of p-GaN films
J Wang, X Ji, Z Yan, X Yan, C Lu, Z Li, S Qi, S Li… - Materials Science in …, 2023 - Elsevier
Abstract Gallium oxide (Ga 2 O 3), with an ultra-wide bandgap, is a promising semiconductor
material for the manufacture of solar blind ultraviolet photodetectors. The Ga 2 O 3 thin films …
material for the manufacture of solar blind ultraviolet photodetectors. The Ga 2 O 3 thin films …