Resistive random access memory (RRAM): an overview of materials, switching mechanism, performance, multilevel cell (MLC) storage, modeling, and applications

F Zahoor, TZ Azni Zulkifli, FA Khanday - Nanoscale research letters, 2020 - Springer
In this manuscript, recent progress in the area of resistive random access memory (RRAM)
technology which is considered one of the most standout emerging memory technologies …

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

F Pan, S Gao, C Chen, C Song, F Zeng - Materials Science and …, 2014 - Elsevier
This review article attempts to provide a comprehensive review of the recent progress in the
so-called resistive random access memories (RRAMs). First, a brief introduction is presented …

Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging

Y Zhang, GQ Mao, X Zhao, Y Li, M Zhang, Z Wu… - Nature …, 2021 - nature.com
The resistive switching effect in memristors typically stems from the formation and rupture of
localized conductive filament paths, and HfO2 has been accepted as one of the most …

Nanoionic memristive phenomena in metal oxides: the valence change mechanism

R Dittmann, S Menzel, R Waser - Advances in Physics, 2021 - Taylor & Francis
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …

Verification and mitigation of ion migration in perovskite solar cells

JW Lee, SG Kim, JM Yang, Y Yang, NG Park - APL materials, 2019 - pubs.aip.org
Metal halide perovskite materials have shown versatile functionality for a variety of
optoelectronic devices. Remarkable progress in device performance has been achieved for …

Artificial synapses with short-and long-term memory for spiking neural networks based on renewable materials

Y Park, JS Lee - Acs Nano, 2017 - ACS Publications
Emulation of biological synapses that perform memory and learning functions is an essential
step toward realization of bioinspired neuromorphic systems. Artificial synaptic devices have …

Artificial neuron and synapse devices based on 2D materials

G Lee, JH Baek, F Ren, SJ Pearton, GH Lee, J Kim - Small, 2021 - Wiley Online Library
Neuromorphic systems, which emulate neural functionalities of a human brain, are
considered to be an attractive next‐generation computing approach, with advantages of …

Biocompatible and flexible chitosan‐based resistive switching memory with magnesium electrodes

NR Hosseini, JS Lee - Advanced Functional Materials, 2015 - Wiley Online Library
A flexible and transparent resistive switching memory based on a natural organic polymer
for future flexible electronics is reported. The device has a coplanar structure of Mg/Ag …

State of the art of metal oxide memristor devices

B Mohammad, MA Jaoude, V Kumar… - Nanotechnology …, 2016 - degruyter.com
Memristors are one of the emerging technologies that can potentially replace state-of-the-art
integrated electronic devices for advanced computing and digital and analog circuit …

Status and prospects of ZnO-based resistive switching memory devices

FM Simanjuntak, D Panda, KH Wei… - Nanoscale research letters, 2016 - Springer
In the advancement of the semiconductor device technology, ZnO could be a prospective
alternative than the other metal oxides for its versatility and huge applications in different …